AS4C128M8D3A-12BCN

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-density storage
  • Low power consumption
  • Fast data transfer rate
• Package: BGA (Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Single unit

Specifications

• Part Number: AS4C128M8D3A-12BCN
• Organization: 128 Megabit x 8
• Voltage: 2.5V - 2.75V
• Speed: 12ns
• Interface: Parallel
• Operating Temperature: 0°C to 70°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The AS4C128M8D3A-12BCN has a total of 60 pins, which are arranged as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power supply voltage | | 2 | VSS | Ground | | 3 | A0-A18 | Address inputs | | 4 | DQ0-DQ7 | Data inputs/outputs | | 5 | WE | Write Enable | | 6 | CAS | Column Address Strobe | | 7 | RAS | Row Address Strobe | | ... | ... | ... |

Functional Features

• High-speed data access and retrieval
• Non-volatile storage
• Easy integration with existing systems
• Low power consumption
• Reliable performance

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Compatible with various systems and devices

Disadvantages

• Relatively higher cost compared to other memory modules
• Limited durability compared to non-volatile memory

Working Principles

The AS4C128M8D3A-12BCN is a dynamic random access memory (DRAM) module. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When data needs to be accessed, the memory controller sends the appropriate address and control signals to retrieve or store the data.

Detailed Application Field Plans

The AS4C128M8D3A-12BCN memory module finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Consumer electronics 6. Automotive systems 7. Industrial automation

Detailed and Complete Alternative Models

1. AS4C256M16D3A-12BCN: 256 Megabit x 16 DRAM module
2. AS4C64M32D3A-12BCN: 64 Megabit x 32 DRAM module
3. AS4C512M4D3A-12BCN: 512 Megabit x 4 DRAM module
4. AS4C32M64D3A-12BCN: 32 Megabit x 64 DRAM module
5. AS4C1024M2D3A-12BCN: 1024 Megabit x 2 DRAM module

These alternative models offer different storage capacities and configurations to suit specific application requirements.

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