AS7C34096A-10TIN

Product Overview

Category

AS7C34096A-10TIN belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Large storage capacity

Package

AS7C34096A-10TIN comes in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS7C34096A-10TIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in reels, with each reel containing a specific quantity of AS7C34096A-10TIN units.

Specifications

• Part Number: AS7C34096A-10TIN
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4M words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC
• Pin Count: 32

Detailed Pin Configuration

The AS7C34096A-10TIN has a total of 32 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A21 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. WE - Write enable
6. OE - Output enable
7. CE - Chip enable
8. UB/LB - Upper byte/lower byte control
9. NC - No connection (reserved pin)

Functional Features

• High-speed access: The AS7C34096A-10TIN offers fast data access, making it suitable for applications requiring quick retrieval of information.
• Low power consumption: This device is designed to minimize power consumption, making it energy-efficient and suitable for battery-powered devices.
• Non-volatile storage: The AS7C34096A-10TIN retains stored data even when power is removed, ensuring data integrity.
• Large storage capacity: With a capacity of 4M words x 8 bits, this memory device can store a significant amount of data.

Advantages and Disadvantages

Advantages

• High-speed operation allows for efficient data access.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile storage ensures data integrity.
• Large storage capacity accommodates extensive data requirements.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited endurance compared to non-volatile memory technologies like Flash.

Working Principles

The AS7C34096A-10TIN operates based on the principles of static random access memory (SRAM). It uses flip-flops to store each bit of data, which can be accessed and modified at high speeds. The memory cells are organized in a matrix, with each cell being uniquely addressed by its row and column.

Detailed Application Field Plans

AS7C34096A-10TIN finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. AS7C34096A-15TIN: Similar to AS7C34096A-10TIN but with a slightly slower access time of 15 ns.
2. AS7C34096A-12TIN: Similar to AS7C34096A-10TIN but with a faster access time of 12 ns.
3. AS7C34096A-10BIN: Similar to AS7C34096A-10TIN but in a different package type (BGA).

These alternative models offer similar functionality and can be considered as substitutes for the AS7C34096A-10TIN depending on specific requirements.

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