BLF6G10LS-135RN,11

Product Overview

Category

The BLF6G10LS-135RN,11 belongs to the category of RF power transistors.

Use

It is used in high-frequency applications such as radio frequency amplifiers and transmitters.

Characteristics

• High power handling capability
• Broadband performance
• High efficiency

Package

The BLF6G10LS-135RN,11 is typically available in a specific package type (e.g., SOT539A) and may come in tape and reel packaging.

Essence

This product is essential for achieving high-power RF amplification in various communication and broadcasting systems.

Packaging/Quantity

The BLF6G10LS-135RN,11 is usually supplied in standard packaging with a specific quantity per package, such as 50 units per reel.

Specifications

• Frequency Range: 470-860 MHz
• Output Power: 135 W
• Efficiency: >30%
• Gain: 17 dB
• Voltage: 32 V
• Current: 15 A

Detailed Pin Configuration

The BLF6G10LS-135RN,11 has a specific pin configuration, including input, output, and biasing pins. Refer to the datasheet for the detailed pinout diagram.

Functional Features

• High linearity
• Excellent thermal stability
• Integrated ESD protection

Advantages

• High power output
• Wide frequency range coverage
• Reliable performance under varying load conditions

Disadvantages

• Higher cost compared to lower power alternatives
• Requires careful thermal management due to high power dissipation

Working Principles

The BLF6G10LS-135RN,11 operates based on the principles of RF power amplification using advanced semiconductor technology, ensuring efficient signal amplification within the specified frequency range.

Detailed Application Field Plans

This transistor is widely used in broadcast transmitters, cellular base stations, and other high-power RF amplification systems operating in the UHF band. It is also suitable for digital television and mobile communication applications.

Detailed and Complete Alternative Models

• BLF6G20LS-200RN,11
• BLF6G25LS-250RN,11
• BLF6G30LS-300RN,11

In conclusion, the BLF6G10LS-135RN,11 is a high-performance RF power transistor designed for demanding applications requiring high power and broadband capabilities. Its specifications, functional features, and application field plans make it a valuable component in modern communication and broadcasting systems.

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