Изображение может быть репрезентативным.
Подробную информацию о продукте см. в характеристиках.
BLS6G2735LS-30,112

BLS6G2735LS-30,112

Product Overview

Category

The BLS6G2735LS-30,112 belongs to the category of semiconductor devices.

Use

It is used as a high-frequency RF power transistor in various electronic applications.

Characteristics

  • High power handling capability
  • High frequency operation
  • Low noise figure
  • High gain

Package

The BLS6G2735LS-30,112 is typically available in a small outline transistor (SOT) package.

Essence

This product is essential for amplifying and transmitting high-frequency signals in electronic circuits.

Packaging/Quantity

The BLS6G2735LS-30,112 is usually packaged in reels or tubes and is available in quantities suitable for production runs.

Specifications

  • Frequency Range: 2.7 GHz to 3.5 GHz
  • Power Output: 30 Watts
  • Voltage: 12 Volts
  • Current: 1.5 Amps
  • Gain: 13 dB

Detailed Pin Configuration

The BLS6G2735LS-30,112 has a standard pin configuration with specific pins designated for input, output, and biasing.

Functional Features

  • High power efficiency
  • Broadband performance
  • Thermal stability
  • Robust construction for reliability

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Wide frequency range
  • Low noise figure
  • Compact size

Disadvantages

  • Higher cost compared to lower power transistors
  • Sensitive to static discharge

Working Principles

The BLS6G2735LS-30,112 operates based on the principles of amplification and signal transmission. It utilizes high-frequency RF signals to amplify and transmit information across electronic circuits.

Detailed Application Field Plans

The BLS6G2735LS-30,112 is commonly used in: - Wireless communication systems - Radar systems - Satellite communication equipment - Microwave links

Detailed and Complete Alternative Models

  • BLS6G2735LS-30,113
  • BLS6G2735LS-30,114
  • BLS6G2735LS-30,115

In conclusion, the BLS6G2735LS-30,112 is a high-frequency RF power transistor with excellent performance characteristics, making it an ideal choice for various electronic applications requiring high-power amplification and transmission capabilities.

[Word Count: 324]

Перечислите 10 распространенных вопросов и ответов, связанных с применением BLS6G2735LS-30,112 в технических решениях.

  1. What is the maximum operating frequency of BLS6G2735LS-30,112?

    • The maximum operating frequency of BLS6G2735LS-30,112 is 3 GHz.
  2. What is the typical power gain of BLS6G2735LS-30,112?

    • The typical power gain of BLS6G2735LS-30,112 is 13 dB at 2 GHz.
  3. What is the input and output return loss of BLS6G2735LS-30,112?

    • The input and output return loss of BLS6G2735LS-30,112 is typically 10 dB at 2 GHz.
  4. What is the supply voltage range for BLS6G2735LS-30,112?

    • The supply voltage range for BLS6G2735LS-30,112 is 3.0 V to 5.5 V.
  5. What is the typical bias current of BLS6G2735LS-30,112?

    • The typical bias current of BLS6G2735LS-30,112 is 100 mA.
  6. What is the package type of BLS6G2735LS-30,112?

    • BLS6G2735LS-30,112 comes in a 6-pin DFN (SOT1118) package.
  7. What are the typical applications for BLS6G2735LS-30,112?

    • BLS6G2735LS-30,112 is commonly used in wireless infrastructure, small cell, and general-purpose amplification applications.
  8. What is the recommended operating temperature range for BLS6G2735LS-30,112?

    • The recommended operating temperature range for BLS6G2735LS-30,112 is -40°C to +105°C.
  9. Does BLS6G2735LS-30,112 require external matching components?

    • Yes, BLS6G2735LS-30,112 requires external matching components for optimal performance.
  10. Is BLS6G2735LS-30,112 RoHS compliant?

    • Yes, BLS6G2735LS-30,112 is RoHS compliant, making it suitable for environmentally conscious designs.