C2M0045170D Product Overview

Introduction

The C2M0045170D is a power MOSFET belonging to the category of semiconductor devices. This entry provides an in-depth overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Semiconductor Device
• Use: Power MOSFET
• Characteristics: High voltage, high speed, low on-resistance
• Package: TO-247-3
• Essence: Efficient power switching
• Packaging/Quantity: Single unit packaging

Specifications

• Voltage Rating: 1700V
• Current Rating: 40A
• On-Resistance: 90mΩ
• Gate Charge: 100nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• High voltage capability
• Fast switching speed
• Low on-resistance
• Enhanced thermal performance

Advantages and Disadvantages

Advantages

• Reduced power loss
• Improved efficiency
• Suitable for high-power applications

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to overvoltage conditions

Working Principles

The C2M0045170D operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel.

Detailed Application Field Plans

The C2M0045170D is ideal for use in various high-power applications, including: - Switched-mode power supplies - Electric vehicles - Renewable energy systems - Industrial motor drives

Detailed and Complete Alternative Models

• C2M0045170P
• C2M0045170E
• C2M0045170F

In conclusion, the C2M0045170D power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for diverse high-power applications. While it comes with advantages such as reduced power loss and improved efficiency, it also has limitations related to cost and sensitivity to overvoltage conditions. Understanding its specifications, pin configuration, functional features, and application field plans is crucial for effectively integrating this semiconductor device into various electronic systems.

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