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IPB80N06S208ATMA1
Introduction
The IPB80N06S208ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-263-3 (D2PAK)
- Essence: Efficient power management
- Packaging/Quantity: Available in reels with varying quantities
Specifications
- Voltage Rating: 60V
- Current Rating: 80A
- On-Resistance: 8mΩ
- Gate Charge: 110nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The IPB80N06S208ATMA1 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).
| Pin Name | Description | |----------|-------------| | G | Gate control input | | D | Power output | | S | Ground reference |
Functional Features
- High voltage capability for power applications
- Low on-resistance for reduced power losses
- Fast switching speed for improved efficiency
- Enhanced thermal performance for reliability
Advantages and Disadvantages
Advantages
- High voltage rating suitable for diverse applications
- Low on-resistance leading to minimal power dissipation
- Fast switching speed for efficient operation
Disadvantages
- Higher gate charge compared to some alternative models
- Limited availability in certain regions
Working Principles
The IPB80N06S208ATMA1 operates based on the principle of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals. When the gate voltage is applied, the MOSFET allows the passage of current, enabling power switching functions.
Detailed Application Field Plans
The IPB80N06S208ATMA1 finds extensive use in various application fields, including: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems
Detailed and Complete Alternative Models
- IRF840: Similar voltage and current ratings
- FDP8870: Comparable on-resistance and gate charge
- STP80NF03L: Alternative with similar package and characteristics
In conclusion, the IPB80N06S208ATMA1 power MOSFET offers high-performance capabilities suitable for a wide range of power switching applications, making it a valuable component in modern electronic systems.
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Перечислите 10 распространенных вопросов и ответов, связанных с применением IPB80N06S208ATMA1 в технических решениях.
What is the maximum drain-source voltage of IPB80N06S208ATMA1?
- The maximum drain-source voltage of IPB80N06S208ATMA1 is 60V.
What is the continuous drain current rating of IPB80N06S208ATMA1?
- The continuous drain current rating of IPB80N06S208ATMA1 is 80A.
What is the on-resistance of IPB80N06S208ATMA1?
- The on-resistance of IPB80N06S208ATMA1 is typically 8mΩ at Vgs = 10V.
What is the gate threshold voltage of IPB80N06S208ATMA1?
- The gate threshold voltage of IPB80N06S208ATMA1 is typically 2V.
What is the power dissipation of IPB80N06S208ATMA1?
- The power dissipation of IPB80N06S208ATMA1 is 300W.
What are the typical applications for IPB80N06S208ATMA1?
- IPB80N06S208ATMA1 is commonly used in motor control, power supplies, and DC-DC converters.
What is the operating temperature range of IPB80N06S208ATMA1?
- The operating temperature range of IPB80N06S208ATMA1 is -55°C to 175°C.
Does IPB80N06S208ATMA1 have built-in protection features?
- Yes, IPB80N06S208ATMA1 has built-in overcurrent protection and thermal shutdown features.
What is the package type of IPB80N06S208ATMA1?
- IPB80N06S208ATMA1 comes in a TO-220 package.
Is IPB80N06S208ATMA1 RoHS compliant?
- Yes, IPB80N06S208ATMA1 is RoHS compliant, making it suitable for environmentally friendly designs.