IR2117STR

Product Overview

Category: Integrated Circuit (IC)

Use: The IR2117STR is a high voltage, high-speed power MOSFET and IGBT driver. It is designed to drive both the high-side and low-side switches in half-bridge and full-bridge configurations.

Characteristics: - High voltage capability - Fast switching speed - Low power consumption - Compact package size - Wide operating temperature range

Package: SOIC-8

Essence: The IR2117STR is an essential component in power electronics applications where efficient and reliable switching of MOSFETs and IGBTs is required.

Packaging/Quantity: The IR2117STR is typically sold in reels containing 2500 units.

Specifications

• Supply Voltage: 10V - 20V
• Output Current: ±2A
• Operating Temperature Range: -40°C to +125°C
• Propagation Delay Time: 120ns (typical)
• Rise/Fall Time: 25ns (typical)
• Input Logic Levels: CMOS/TTL compatible

Pin Configuration

The IR2117STR features an 8-pin Small Outline Integrated Circuit (SOIC) package. The pin configuration is as follows:

1. Vb (Bootstrap supply voltage for high-side gate driver)
2. HO (High-side gate driver output)
3. VS (Logic ground)
4. LO (Low-side gate driver output)
5. VB (Bootstrap supply voltage for high-side gate driver)
6. HIN (High-side gate driver input)
7. LIN (Low-side gate driver input)
8. COM (Common reference for gate driver outputs)

Functional Features

• Independent high-side and low-side gate drivers
• Bootstrap supply voltage for high-side gate driver
• Under-voltage lockout protection
• Over-current protection
• Shoot-through prevention logic
• Schmitt-triggered inputs for noise immunity

Advantages and Disadvantages

Advantages: - High voltage capability allows driving of power MOSFETs and IGBTs in various applications - Fast switching speed enables efficient power conversion - Low power consumption reduces energy losses - Compact package size facilitates space-saving designs - Wide operating temperature range ensures reliable operation in harsh environments

Disadvantages: - Limited output current may restrict usage in high-power applications - Requires external bootstrap capacitor for high-side gate driver

Working Principles

The IR2117STR operates by receiving input signals from a microcontroller or other control circuitry. It generates the necessary gate drive voltages to switch the high-side and low-side power switches. The bootstrap supply voltage is used to provide the required voltage level for the high-side gate driver.

When the input signals change state, the IR2117STR quickly adjusts the gate drive voltages to turn on/off the power switches, allowing the desired current flow through the load. The under-voltage lockout and over-current protection features ensure safe operation and protect the circuit components.

Detailed Application Field Plans

The IR2117STR is widely used in various applications, including: 1. Motor control systems 2. Switch-mode power supplies 3. Inverters and converters 4. Uninterruptible Power Supplies (UPS) 5. Solar inverters 6. Electric vehicle charging systems

Alternative Models

Other alternative models that can be considered as replacements for the IR2117STR include: - IR2110 - IR2104 - IRS2110 - IRS2104

These models offer similar functionality and are compatible with many of the same applications.

In conclusion, the IR2117STR is a high-performance power MOSFET and IGBT driver IC. Its fast switching speed, high voltage capability, and compact package make it suitable for a wide range of power electronics applications. However, its limited output current and requirement for an external bootstrap capacitor should be taken into consideration when selecting the appropriate driver for specific designs.

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