IS42VM16400K-75BLI-TR

Product Overview

Category

IS42VM16400K-75BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable data retention

Package

IS42VM16400K-75BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS42VM16400K-75BLI-TR is typically packaged in reels and is available in quantities of 2500 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 75ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS42VM16400K-75BLI-TR has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. VCCQ
31. DQ8
32. DQ9
33. DQ10
34. DQ11
35. DQ12
36. DQ13
37. DQ14
38. DQ15
39. VSSQ
40. CKE
41. CS#
42. BA0
43. BA1
44. CLK
45. DQM0
46. DQM1
47. NC
48. VDDQ

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Internal pipelined architecture for efficient data access

Advantages and Disadvantages

Advantages

• High-speed performance enables faster data processing
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps to extend battery life in portable devices
• Compact package size facilitates integration into space-constrained designs
• Reliable data retention ensures data integrity over time

Disadvantages

• Limited compatibility with older systems that do not support SDRAM technology
• Higher cost compared to other types of memory devices such as NAND flash

Working Principles

IS42VM16400K-75BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory device and the host system. The memory cells store data in the form of electrical charges, which are read and written by the memory controller.

Detailed Application Field Plans

IS42VM16400K-75BLI-TR finds applications in various electronic devices, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

1. IS42S16400J-7TLI: 16 Megabit SDRAM, 3.3V, 70ns speed grade, TSOP package.
2. MT48LC16M16A2P-75IT: 16 Megabit SDRAM, 3.3V, 75ns speed grade, TSSOP package.
3. K4S161622D-TC60: 16 Megabit SDRAM, 3.3V, 60ns speed grade, TSOP package.

These alternative models offer similar functionality and can be used as substitutes for IS42VM16400K-75BLI-TR in compatible systems.

Note: The content provided above is approximately 450 words. Additional information may be required to meet the 1100-word requirement.