IS42VM32160E-6BLI-TR

Product Overview

Category

IS42VM32160E-6BLI-TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42VM32160E-6BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS42VM32160E-6BLI-TR is typically packaged in reels and is available in quantities suitable for mass production.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Organization: 32M words x 16 bits
• Operating Voltage: 2.5V - 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 6 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS
38. /CKE
39. /LDQM
40. /UDQM
41. VSS

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Internal pipelined architecture for efficient data access

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for space-efficient designs
• Reliable performance ensures data integrity

Disadvantages

• Limited compatibility with older memory interfaces
• Higher cost compared to some alternative memory technologies

Working Principles

IS42VM32160E-6BLI-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It uses a clock signal to synchronize data transfers between the memory device and the host system. The memory cells store data as charge in capacitors, which needs to be periodically refreshed to maintain data integrity.

Detailed Application Field Plans

IS42VM32160E-6BLI-TR finds applications in various electronic devices, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

• IS42VM16160E-6BLI-TR
• IS42S16400F-7TLI
• MT48LC16M16A2P-75IT

These alternative models offer similar specifications and functionality to IS42VM32160E-6BLI-TR, providing options for different design requirements.

In conclusion, IS42VM32160E-6BLI-TR is a high-speed synchronous DRAM with a large storage capacity. It offers reliable performance, low power consumption, and compact packaging. While it has some limitations in compatibility and cost, it finds applications in various electronic devices. Alternative models are available to cater to different design needs.