IS43TR16128AL-125KBLI-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Part Number: IS43TR16128AL-125KBLI-TR
• Memory Type: SRAM (Static Random Access Memory)
• Density: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 1.7V - 1.95V
• Speed: 125 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The IS43TR16128AL-125KBLI-TR has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

```

Pin Name Description

1 VDD Power Supply 2 A0 Address Input 3 A1 Address Input 4 A2 Address Input 5 A3 Address Input 6 A4 Address Input 7 A5 Address Input 8 A6 Address Input 9 A7 Address Input 10 A8 Address Input 11 A9 Address Input 12 A10 Address Input 13 A11 Address Input 14 A12 Address Input 15 A13 Address Input 16 A14 Address Input 17 A15 Address Input 18 OE# Output Enable 19 WE# Write Enable 20 LB# Lower Byte Enable 21 UB# Upper Byte Enable 22 DQ0 Data Input/Output 23 DQ1 Data Input/Output 24 DQ2 Data Input/Output 25 DQ3 Data Input/Output 26 DQ4 Data Input/Output 27 DQ5 Data Input/Output 28 DQ6 Data Input/Output 29 DQ7 Data Input/Output 30 DQ8 Data Input/Output 31 DQ9 Data Input/Output 32 DQ10 Data Input/Output 33 DQ11 Data Input/Output 34 DQ12 Data Input/Output 35 DQ13 Data Input/Output 36 DQ14 Data Input/Output 37 DQ15 Data Input/Output 38 VSS Ground 39 VDDQ Power Supply for I/O Buffers 40 NC No Connection 41 NC No Connection 42 NC No Connection 43 NC No Connection 44 NC No Connection 45 NC No Connection 46 NC No Connection 47 NC No Connection 48 VSSQ Ground for I/O Buffers ```

Functional Features

• High-speed operation: The IS43TR16128AL-125KBLI-TR offers a speed of 125 MHz, allowing for fast data access and retrieval.
• Low-power consumption: This memory device is designed to minimize power usage, making it suitable for battery-powered applications.
• Non-volatile storage: The SRAM technology used in this IC ensures that data is retained even when power is removed.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access. - Low-power consumption prolongs battery life in portable devices. - Non-volatile storage ensures data retention.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per unit of storage compared to alternative memory options.

Working Principles

The IS43TR16128AL-125KBLI-TR is based on SRAM technology, which utilizes flip-flops to store and retrieve data. It operates by storing each bit of data in a dedicated flip-flop circuit, allowing for fast and random access to any memory location. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The IS43TR16128AL-125KBLI-TR is commonly used in various applications that require high-speed and low-power memory storage. Some potential application fields include: 1. Mobile devices: Smartphones, tablets, and wearable devices benefit from the high-speed and low-power characteristics of this memory IC. 2. Networking equipment: Routers, switches, and network appliances utilize this memory for caching and buffering purposes. 3. Industrial