IS61WV10248BLL-10TLI-TR

Product Overview

Category

IS61WV10248BLL-10TLI-TR belongs to the category of high-speed, low-power CMOS static random access memory (SRAM) chips.

Use

This product is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval capabilities.

Characteristics

• High-speed operation: The IS61WV10248BLL-10TLI-TR offers fast access times, allowing for efficient data processing.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 1,048,576 bits (128K x 8), this chip can store a significant amount of data.
• Wide operating voltage range: The IS61WV10248BLL-10TLI-TR can operate within a voltage range of 2.7V to 3.6V, providing flexibility in different applications.

Package and Quantity

The IS61WV10248BLL-10TLI-TR is available in a small-outline integrated circuit (SOIC) package. It is typically sold in reels containing a specific quantity, such as 2500 units per reel.

Specifications

• Organization: 128K x 8 bits
• Operating Voltage Range: 2.7V to 3.6V
• Access Time: 10 ns
• Standby Current: 5 μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Type: SOIC
• Package Dimensions: 150 mil

Detailed Pin Configuration

The IS61WV10248BLL-10TLI-TR has a total of 32 pins. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A16)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Random Access: The IS61WV10248BLL-10TLI-TR allows for random access to any memory location, enabling efficient data retrieval.
• Byte-Wide Operation: This SRAM chip supports byte-wide operations, allowing for easy interfacing with microcontrollers and other devices.
• Low Power Standby Mode: When not in use, the chip can enter a low-power standby mode, reducing power consumption.

Advantages and Disadvantages

Advantages

• High-speed operation enables fast data access.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity accommodates significant amounts of data.
• Wide operating voltage range provides flexibility in different applications.

Disadvantages

• Limited storage capacity compared to higher-capacity memory chips.
• Relatively higher cost per bit compared to some other memory technologies.

Working Principles

The IS61WV10248BLL-10TLI-TR operates based on the principles of static random access memory. It uses flip-flops to store each bit of data, which remains stable as long as power is supplied. The chip utilizes address lines to select specific memory locations and data lines for reading from or writing to those locations.

Detailed Application Field Plans

The IS61WV10248BLL-10TLI-TR finds application in various electronic systems, including but not limited to: - Embedded systems - Communication equipment - Industrial automation - Medical devices - Automotive electronics

Alternative Models

Several alternative models with similar specifications and functionality are available in the market. Some notable alternatives to the IS61WV10248BLL-10TLI-TR include: - CY62128EV30LL-45ZSXI by Cypress Semiconductor - AS6C1008-55PCN by Alliance Memory - M68AF127BM70MC6 by STMicroelectronics

These alternative models can be considered based on specific requirements and availability.

In conclusion, the IS61WV10248BLL-10TLI-TR is a high-speed, low-power CMOS SRAM chip with a large storage capacity. It offers fast access times, low power consumption, and wide operating voltage range. While it has limitations in terms of storage capacity and cost per bit, it finds application in various electronic systems. Alternative models are also available for consideration.