IS62WV6416BLL-55TI

Product Overview

Category

IS62WV6416BLL-55TI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS62WV6416BLL-55TI is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of IS62WV6416BLL-55TI lies in its ability to provide fast and reliable data storage and retrieval, contributing to the overall performance of electronic devices.

Packaging/Quantity

IS62WV6416BLL-55TI is typically packaged in trays or reels, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 64 Megabits (8 Megabytes)
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Organization: 8M x 8 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS62WV6416BLL-55TI is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A22 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. WE - Write enable
6. OE - Output enable
7. CE - Chip enable
8. UB/LB - Upper byte/lower byte control
9. BYTE - Byte control
10. NC - No connection

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient energy usage.
• Non-volatile memory retains data even when power is disconnected.
• Large storage capacity accommodates a significant amount of data.
• Reliable performance guarantees data integrity and system stability.

Advantages and Disadvantages

Advantages

• Fast access time enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile memory eliminates the need for constant data backup.
• Large storage capacity caters to the increasing demand for data-intensive applications.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other types of memory technologies.
• Limited scalability in terms of capacity expansion.
• Relatively larger physical size compared to some alternative memory solutions.

Working Principles

IS62WV6416BLL-55TI operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is disconnected. The memory cells within the chip are organized into an array, with each cell capable of storing one bit of data. The address inputs are used to select the specific memory location, while the data inputs/outputs facilitate the reading and writing of data.

Detailed Application Field Plans

IS62WV6416BLL-55TI finds application in various electronic devices and systems, including but not limited to: - Computers and servers - Smartphones and tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS62WV6416BLL-55TI include: - MT48LC8M16A2P-75: 64 Megabit (8 Megabyte) SRAM, 3.3V, 75 nanoseconds access time. - AS6C62256A-55: 32 Kilobyte SRAM, 5V, 55 nanoseconds access time. - CY62157EV30LL-45ZSXI: 2 Megabit (256 Kilobyte) SRAM, 1.8V, 45 nanoseconds access time.

These alternative models can be considered based on specific requirements and compatibility with the target system.

Word count: 550 words