IS64WV25616EDBLL-10BA3

Product Overview

Category

IS64WV25616EDBLL-10BA3 belongs to the category of high-speed synchronous dynamic random access memory (SDRAM) chips.

Use

This product is primarily used in electronic devices such as computers, servers, and networking equipment for data storage and retrieval purposes.

Characteristics

• High-speed operation: The IS64WV25616EDBLL-10BA3 offers fast data transfer rates, making it suitable for applications that require quick access to large amounts of data.
• Large storage capacity: With a capacity of 256 megabits (32 megabytes), this SDRAM chip provides ample space for storing data.
• Low power consumption: The chip is designed to operate efficiently, consuming minimal power during its operation.
• Wide temperature range: The IS64WV25616EDBLL-10BA3 can function reliably across a wide temperature range, making it suitable for various environments.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Package and Quantity

The IS64WV25616EDBLL-10BA3 is available in a small outline, thin profile (TSOP) package. It is typically sold in reels containing a specific quantity of chips, usually 1000 units per reel.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 256Mbit x 16
• Operating Voltage: 2.5V - 3.3V
• Clock Frequency: 100MHz
• Access Time: 10ns
• Interface: Parallel
• Package Type: TSOP
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS64WV25616EDBLL-10BA3 has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. WE#
37. CAS#
38. RAS#
39. CS#
40. CKE
41. CLK
42. NC
43. NC
44. VCCQ
45. VSSQ
46. DM0
47. DM1
48. VSS
49. VDD
50. VSS
51. VDD
52. VSS
53. VDD
54. VSS

Functional Features

The IS64WV25616EDBLL-10BA3 offers the following functional features:

• Burst mode operation: It supports burst read and write operations, allowing for efficient data transfer.
• Auto-refresh and self-refresh modes: These modes help in maintaining data integrity and reducing power consumption during idle periods.
• On-die termination (ODT): ODT improves signal quality by matching the impedance of the memory bus.
• Programmable CAS latency: The chip allows for the selection of different CAS latency settings to optimize performance.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption contributes to energy efficiency.
• Wide temperature range ensures reliability in various environments.
• RoHS compliance promotes environmental friendliness.

Disadvantages

• Limited compatibility with certain older systems that do not support SDRAM technology.
• Relatively higher cost compared to other memory options.

Working Principles

The IS64WV25616EDBLL-10BA3 operates based on synchronous dynamic random access memory (SDRAM) principles. It uses a clock signal to synchronize data transfers between the memory chip and the system. The chip stores data in an array of capacitors, which are periodically refreshed to maintain data integrity. When requested, the chip retrieves the stored data by accessing the appropriate memory cells based on the provided address.

Detailed Application Field Plans

The IS64WV25616EDBLL-10BA3 finds applications