IS66WVC4M16ECLL-7010BLI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory module

Characteristics: - High-speed and high-density memory - Low power consumption - Wide temperature range (-40°C to +85°C) - RoHS compliant

Package: Ball Grid Array (BGA)

Essence: This product is a memory module designed for use in various electronic devices. It provides high-speed and high-density memory storage with low power consumption.

Packaging/Quantity: The IS66WVC4M16ECLL-7010BLI is typically packaged in trays or reels, with a quantity of 1000 units per package.

Specifications

• Memory Type: SDRAM (Synchronous Dynamic Random Access Memory)
• Memory Size: 64 Megabits (4 Megabytes)
• Organization: 4M x 16 bits
• Supply Voltage: 2.5V
• Clock Frequency: Up to 166 MHz
• Data Rate: 333 Mbps
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 9mm x 11mm

Detailed Pin Configuration

The IS66WVC4M16ECLL-7010BLI has a total of 54 pins. Here is the detailed pin configuration:

1. VDD
2. VSS
3. DQ0
4. DQ1
5. DQ2
6. DQ3
7. DQ4
8. DQ5
9. DQ6
10. DQ7
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. /CAS
36. /RAS
37. /WE
38. /CS
39. /CKE
40. /LDQS
41. LDQS
42. /UDQS
43. UDQS
44. /DQM0
45. /DQM1
46. VREF
47. VREF
48. VREF
49. VREF
50. VREF
51. VREF
52. VREF
53. VREF
54. VREF

Functional Features

• High-speed data transfer with a clock frequency of up to 166 MHz
• Low power consumption for energy-efficient operation
• Wide temperature range allows for use in various environments
• RoHS compliant, ensuring environmental friendliness

Advantages and Disadvantages

Advantages: - High-speed and high-density memory storage - Low power consumption - Wide temperature range suitability - RoHS compliant

Disadvantages: - Limited memory size (64 Megabits)

Working Principles

The IS66WVC4M16ECLL-7010BLI operates based on the principles of Synchronous Dynamic Random Access Memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The memory cells are accessed by sending commands through control signals such as /CAS (Column Address Strobe), /RAS (Row Address Strobe), /WE (Write Enable), and /CS (Chip Select). The clock signal (/CKE) synchronizes the data transfer between the memory module and the system.

Detailed Application Field Plans

The IS66WVC4M16ECLL-7010BLI is widely used in various electronic devices that require high-speed and high-density memory storage. Some common application fields include: - Personal computers - Laptops - Servers - Networking equipment - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality to the IS66WVC4M16ECLL-7010BLI:

1. IS66WVC4M16DALL-7010BLI
2. IS66WVC4M16DCLL-7010BLI
3. IS66WVC4M16EALL-7010BLI
4. IS66WVC4M16ECLL-7010BLL
5. IS66WVC4M16ECLL-7010BNI

These alternative models provide different options for memory size,