IS66WVE2M16EALL-70BLI

Product Overview

Category

IS66WVE2M16EALL-70BLI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS66WVE2M16EALL-70BLI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS66WVE2M16EALL-70BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 2 Meg x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The IS66WVE2M16EALL-70BLI has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. /CKE
41. /BA0
42. /BA1
43. VDD
44. VDD
45. VSS
46. VSS
47. NC
48. NC

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Internal pipelined architecture for efficient data access

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps in extending battery life
• Compact package size saves valuable board space
• Reliable performance ensures data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance due to the finite number of write cycles
• Susceptible to data loss in case of power failure without proper backup mechanisms

Working Principles

IS66WVE2M16EALL-70BLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in an array of capacitors, with each capacitor representing a single bit of data. The memory cells are organized in rows and columns, and data is accessed by specifying the row and column addresses.

During read and write operations, the memory controller sends commands and addresses to the SDRAM, which then retrieves or stores the data accordingly. The synchronous nature of SDRAM ensures that data transfers occur at specific clock cycles, allowing for high-speed operation.

Detailed Application Field Plans

IS66WVE2M16EALL-70BLI finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS66WVE2M16EALL-70BLI include: - MT48LC2M32B2P-6A: 2 Meg x 32-bit SDRAM, 6 ns speed grade - K4S561632H-UC75: 2 Meg x 16-bit SDRAM