MAGX-000912-125L00

Introduction

MAGX-000912-125L00 is a high-power GaN-on-SiC HEMT transistor designed for use in various applications requiring high-frequency, high-power amplification. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Component
• Use: High-frequency, high-power amplification
• Characteristics: High power density, wide bandwidth, high gain, and efficiency
• Package: LGA (Land Grid Array)
• Essence: Gallium Nitride (GaN) on Silicon Carbide (SiC) technology
• Packaging/Quantity: Single unit packaging

Specifications

• Frequency Range: 0.9 GHz to 1.2 GHz
• Output Power: 12 W
• Voltage: 28 V
• Gain: 15 dB
• Efficiency: 65%
• Thermal Resistance: 3.5 °C/W

Detailed Pin Configuration

The MAGX-000912-125L00 features a standard pin configuration with input, output, and bias pins. The detailed pin configuration is as follows: - Pin 1: RF Input - Pin 2: Ground - Pin 3: Bias - Pin 4: RF Output

Functional Features

• High Power Density: Enables compact designs and high-performance systems.
• Wide Bandwidth: Supports operation across a broad frequency range.
• High Gain: Provides significant signal amplification for various applications.
• Efficiency: Optimizes power usage and minimizes heat dissipation.

Advantages and Disadvantages

Advantages

• High power density allows for smaller system footprint.
• Wide bandwidth supports versatile applications.
• High gain ensures strong signal amplification.
• Efficiency reduces power consumption and heat generation.

Disadvantages

• Higher cost compared to traditional transistors.
• Sensitive to voltage spikes and ESD events.

Working Principles

The MAGX-000912-125L00 operates based on the principles of Gallium Nitride (GaN) on Silicon Carbide (SiC) technology, which enables high-frequency, high-power amplification by leveraging the unique properties of these materials. When biased and driven with an RF input signal, the transistor amplifies the signal with high gain and efficiency, making it suitable for various high-power applications.

Detailed Application Field Plans

The MAGX-000912-125L00 is ideal for use in the following applications: - Radar Systems - Satellite Communications - Wireless Infrastructure - Test and Measurement Equipment - Avionics Systems

Detailed and Complete Alternative Models

• MAGX-000912-100L00: Lower power variant for applications requiring reduced output power.
• MAGX-000912-150L00: Higher power variant for applications demanding increased output power.
• MAGX-000912-125L01: Enhanced version with improved thermal performance.

In conclusion, the MAGX-000912-125L00 is a high-power GaN-on-SiC HEMT transistor that offers exceptional performance in high-frequency, high-power amplification applications. Its advanced characteristics, functional features, and diverse application field plans make it a valuable component in modern electronic systems.

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