DS1249Y-85IND# - Product Overview

Basic Information

• Category: Integrated Circuits (ICs)
• Use: Non-Volatile SRAM
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Non-volatile data storage
• Package: 32-pin DIP (Dual In-line Package)
• Essence: Combines the benefits of both RAM and non-volatile memory
• Packaging/Quantity: Individually packaged, quantity varies based on order size

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Access Time: 85ns
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: 10^6 write cycles

Detailed Pin Configuration

The DS1249Y-85IND# has a total of 32 pins. The pin configuration is as follows:

```

Pin Name Description

1 A0-A16 Address Inputs 2 CE Chip Enable 3 OE Output Enable 4 WE Write Enable 5 VCC Power Supply 6 GND Ground 7-30 DQ0-DQ23 Data Input/Output 31 RST Reset 32 NC No Connection ```

Functional Features

• Non-volatile Storage: Retains data even when power is removed
• High-Speed Performance: Fast access time for efficient data retrieval
• Low Power Consumption: Reduces energy usage and extends battery life
• Easy Integration: Compatible with standard microprocessors and controllers
• Automatic Store on Power Loss: Ensures data integrity during unexpected power failures

Advantages

• Eliminates the need for external backup batteries or EEPROMs
• Provides fast and reliable data storage in various applications
• Low power consumption makes it suitable for portable devices
• Easy to integrate into existing systems due to standard interface

Disadvantages

• Limited storage capacity compared to other non-volatile memory options
• Higher cost per bit compared to traditional RAM
• Limited endurance compared to other non-volatile memory technologies

Working Principles

The DS1249Y-85IND# utilizes a combination of volatile SRAM and non-volatile EEPROM technology. It stores data in the SRAM array, which is backed up by an integrated EEPROM. When power is applied, the data is automatically transferred from the EEPROM to the SRAM. This allows for fast read and write operations while ensuring data integrity during power loss.

Detailed Application Field Plans

The DS1249Y-85IND# is commonly used in applications that require non-volatile data storage with high-speed access. Some potential application fields include: - Industrial automation systems - Automotive electronics - Medical devices - Gaming consoles - Communication equipment

Detailed Alternative Models

• DS1249AB-70IND#: 1 Megabit Non-Volatile SRAM, 70ns Access Time
• DS1249Y-120IND#: 1 Megabit Non-Volatile SRAM, 120ns Access Time
• DS1249Y-150IND#: 1 Megabit Non-Volatile SRAM, 150ns Access Time

These alternative models offer different access times to suit specific application requirements.

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