M29W640GH7ANB6E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70 ns (max)
• Page Size: 256 bytes
• Block Erase Time: 10 ms (typical)

Detailed Pin Configuration

The M29W640GH7ANB6E flash memory IC has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE#: Reset/byte enable control signal
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect or accelerated programming control
10. VSS: Ground

Functional Features

• High-Speed Read/Write: The M29W640GH7ANB6E offers fast access times, allowing for quick data retrieval and storage.
• Non-Volatile Storage: The flash memory retains data even when power is disconnected, ensuring data integrity.
• Reliable Performance: With a wide operating temperature range and robust design, the IC delivers consistent performance in various environments.
• Block Erase Capability: The memory can erase data in blocks, enabling efficient management of stored information.

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Non-volatile memory - Reliable performance

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Higher cost compared to other types of memory

Working Principles

The M29W640GH7ANB6E flash memory utilizes a floating-gate transistor technology. It stores digital information by trapping electric charges within the floating gate, which alters the transistor's behavior. When reading data, the charge level is detected, allowing retrieval of the stored information. During programming or erasing, high voltages are applied to modify the charge level within the floating gate.

Detailed Application Field Plans

The M29W640GH7ANB6E flash memory finds applications in various electronic devices, including but not limited to: - Personal computers - Mobile phones - Digital cameras - Automotive electronics - Industrial control systems

Alternative Models

Other flash memory ICs with similar specifications and capabilities include: - M29W640GL70N6E - M29W640GT70N6E - M29W640GB70N6E

These alternative models offer comparable features and can be considered as substitutes for the M29W640GH7ANB6E based on specific application requirements.

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