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M58LR128KT85ZB6E

M58LR128KT85ZB6E

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory storage
  • Characteristics: High capacity, fast access speed, low power consumption
  • Package: BGA (Ball Grid Array)
  • Essence: Non-volatile memory chip
  • Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

  • Memory Type: Flash
  • Capacity: 128 kilobits (16 kilobytes)
  • Operating Voltage: 2.7V - 3.6V
  • Access Time: 85 nanoseconds
  • Temperature Range: -40°C to +85°C
  • Interface: SPI (Serial Peripheral Interface)

Detailed Pin Configuration

The M58LR128KT85ZB6E has a total of 8 pins:

  1. VCC: Power supply voltage
  2. GND: Ground reference
  3. CS: Chip select input
  4. SCK: Serial clock input
  5. SI: Serial data input
  6. SO: Serial data output
  7. WP: Write protect input
  8. HOLD: Hold input

Functional Features

  • Non-volatile memory: Retains data even when power is disconnected
  • High-speed access: Allows for quick read and write operations
  • Low power consumption: Efficient energy usage
  • SPI interface: Simple and widely supported communication protocol
  • Write protection: Prevents accidental modification of stored data
  • Hold function: Pauses ongoing operations without losing data

Advantages and Disadvantages

Advantages: - Compact size and high storage capacity - Fast access time for efficient data retrieval - Low power consumption extends battery life - Compatibility with SPI interface simplifies integration - Write protection and hold functions enhance data security

Disadvantages: - Relatively small memory capacity compared to other storage options - Limited temperature range for operation

Working Principles

The M58LR128KT85ZB6E is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When writing data, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. Reading data involves measuring the conductivity of the floating gate to determine the stored value.

Detailed Application Field Plans

The M58LR128KT85ZB6E is commonly used in various electronic devices that require non-volatile memory storage. Some application fields include:

  1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
  2. Automotive Systems: Integrated into car infotainment systems, navigation units, and engine control modules for storing critical information.
  3. Industrial Automation: Employed in programmable logic controllers (PLCs), robotics, and monitoring systems for data logging and configuration storage.
  4. Medical Devices: Utilized in medical equipment such as patient monitors, infusion pumps, and diagnostic devices for storing patient data and device settings.

Detailed and Complete Alternative Models

  1. M58LR256KT85ZB6E: Higher capacity version with 256 kilobits of memory.
  2. M58LR512KT85ZB6E: Further upgraded model with 512 kilobits of memory.
  3. M58LR1GK85ZB6E: Expanded capacity variant with 1 gigabit of memory.

These alternative models offer increased storage capacity while maintaining similar characteristics and functionality.

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Перечислите 10 распространенных вопросов и ответов, связанных с применением M58LR128KT85ZB6E в технических решениях.

Sure! Here are 10 common questions and answers related to the application of M58LR128KT85ZB6E in technical solutions:

  1. Q: What is M58LR128KT85ZB6E? A: M58LR128KT85ZB6E is a specific model of memory chip manufactured by a company (specify the company if known). It has a capacity of 128 kilobits and operates at a speed of 85 MHz.

  2. Q: What are the typical applications of M58LR128KT85ZB6E? A: M58LR128KT85ZB6E is commonly used in various technical solutions that require non-volatile memory, such as embedded systems, industrial automation, automotive electronics, and consumer electronics.

  3. Q: What is the voltage requirement for M58LR128KT85ZB6E? A: M58LR128KT85ZB6E operates at a voltage range of X volts to Y volts (provide the specific voltage range if known).

  4. Q: Can M58LR128KT85ZB6E be used in high-temperature environments? A: Yes, M58LR128KT85ZB6E is designed to operate reliably in high-temperature environments, typically up to Z degrees Celsius (provide the specific temperature limit if known).

  5. Q: Does M58LR128KT85ZB6E support any specific communication protocols? A: M58LR128KT85ZB6E is a memory chip and does not have built-in communication protocols. It can be interfaced with microcontrollers or other devices using standard protocols like SPI or I2C.

  6. Q: What is the expected lifespan of M58LR128KT85ZB6E? A: M58LR128KT85ZB6E has a typical lifespan of X years (provide the specific lifespan if known), depending on usage conditions and operating parameters.

  7. Q: Can M58LR128KT85ZB6E be easily integrated into existing systems? A: Yes, M58LR128KT85ZB6E is designed to be compatible with standard memory interfaces, making it relatively easy to integrate into existing systems.

  8. Q: Is M58LR128KT85ZB6E resistant to electromagnetic interference (EMI)? A: M58LR128KT85ZB6E may have some level of resistance to EMI, but additional measures like proper PCB layout and shielding may be required for optimal performance in high EMI environments.

  9. Q: Are there any specific programming requirements for M58LR128KT85ZB6E? A: M58LR128KT85ZB6E may require specific programming instructions or initialization sequences, which can be found in the datasheet or application notes provided by the manufacturer.

  10. Q: Can M58LR128KT85ZB6E be used as a direct replacement for other memory chips in existing designs? A: M58LR128KT85ZB6E may not be a drop-in replacement for all memory chips. It is important to verify compatibility with the existing design, including pinout, voltage requirements, and communication protocols, before substitution.

Please note that the specific details mentioned in the answers may vary based on the actual specifications and documentation provided by the manufacturer of M58LR128KT85ZB6E.