MT25TL256BAA1ESF-0AAT TR

Product Overview

Category

MT25TL256BAA1ESF-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: MT25TL256BAA1ESF-0AAT TR offers a storage capacity of 256 megabits (32 megabytes).
• Fast access time: It provides quick read and write operations, allowing for efficient data transfer.
• Reliable: This memory device has a high endurance and can withstand multiple read and write cycles without degradation.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

MT25TL256BAA1ESF-0AAT TR comes in a compact surface-mount package, which facilitates easy integration into electronic circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

MT25TL256BAA1ESF-0AAT TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of memory devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of MT25TL256BAA1ESF-0AAT TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends a serial sequence temporarily
4. WP: Write protect input
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select input

Functional Features

• High-speed read and write operations
• Sector erase and program capability
• Block erase and program capability
• Chip erase capability
• Software and hardware write protection options
• Fast power-up and power-down operations
• Deep power-down mode for low-power consumption

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Versatile interface for easy integration

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to some other non-volatile memory types

Working Principles

MT25TL256BAA1ESF-0AAT TR utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is detected, allowing retrieval of the stored information.

Detailed Application Field Plans

MT25TL256BAA1ESF-0AAT TR finds applications in various fields, including: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Networking equipment - IoT (Internet of Things) devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT25TL256BAA1ESF-0AAT TR include: - MT25QL256ABA1EW7-0SIT - S25FL256SAGMFI011 - W25Q256JVSIQ

These alternative models may have slight variations in specifications and pin configurations, but they serve the same purpose of non-volatile data storage.

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