MT28F004B5VP-8 T

Product Overview

Category

MT28F004B5VP-8 T belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Low power consumption
• Compact size
• Durable and reliable

Package

MT28F004B5VP-8 T comes in a small form factor package, designed to fit seamlessly into electronic devices. The package ensures protection against external factors like moisture, dust, and physical damage.

Essence

The essence of MT28F004B5VP-8 T lies in its ability to store and retrieve data quickly and efficiently, making it an essential component in modern electronic devices.

Packaging/Quantity

MT28F004B5VP-8 T is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years

Detailed Pin Configuration

The pin configuration of MT28F004B5VP-8 T is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. CE - Chip enable
4. OE - Output enable
5. WE - Write enable
6. I/O0-I/O7 - Data input/output lines
7. RY/BY# - Ready/Busy status
8. WP# - Write protect
9. RESET# - Reset signal

Functional Features

• High-speed data transfer
• Erase and write operations at the byte level
• Built-in error correction code (ECC)
• Automatic sleep mode for power saving
• Block locking feature to protect critical data
• Hardware and software protection mechanisms

Advantages and Disadvantages

Advantages

• Fast read and write operations enhance overall device performance.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for integration into small form factor designs.
• Durable and reliable, ensuring data integrity over extended periods.

Disadvantages

• Limited storage capacity compared to other flash memory options.
• Higher cost per unit compared to alternative memory technologies.
• Requires additional circuitry for proper interfacing with the host device.

Working Principles

MT28F004B5VP-8 T utilizes a floating gate transistor technology called NAND flash memory. It stores data by trapping electric charges within the floating gate, which can be erased or programmed using specific voltage levels. The stored charge determines the binary state of each memory cell, representing either a "0" or a "1".

Detailed Application Field Plans

MT28F004B5VP-8 T finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT28F004B5VP-8 T include: - Samsung K9F5608U0D - Micron MT29F4G08ABADAWP - Toshiba TC58NVG2S0FTA00

These models provide comparable specifications and features, allowing for flexibility in design and sourcing options.

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