MT28F008B3VG-9 TET TR

Product Overview

Category: Integrated Circuit (IC)

Use: Memory storage device

Characteristics: - Non-volatile memory - High-density storage - Fast read and write operations - Low power consumption

Package: TET TR (Thin Small Outline Package, Tape and Reel)

Essence: The MT28F008B3VG-9 TET TR is a high-performance memory IC designed for various applications that require non-volatile storage.

Packaging/Quantity: The MT28F008B3VG-9 TET TR is packaged in a Thin Small Outline Package (TET) and is supplied in tape and reel format. Each reel contains a specific quantity of ICs, typically 1000 units.

Specifications

• Memory Capacity: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 ns (max)
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Data Retention: 20 years (typical)

Pin Configuration

The MT28F008B3VG-9 TET TR has the following pin configuration:

```

---

| | | U1 | |_______________|

   PINOUT

1 A16 VCC 2 A14 A12 3 A7 A6 4 A5 A4 5 A3 A2 6 A1 A0 7 DQ7 DQ6 8 DQ5 DQ4 9 DQ3 DQ2 10 DQ1 DQ0 11 WE CE 12 OE BYTE# 13 ALE CLE 14 RE# WP# 15 RY/BY VSS 16 NC A8 17 A9 A11 18 A13 A15 19 VCC NC 20 NC VCC ```

Functional Features

• High-Speed Operation: The MT28F008B3VG-9 TET TR offers fast read and write operations, allowing for efficient data access.
• Reliable Data Retention: With a typical data retention period of 20 years, this memory IC ensures long-term storage reliability.
• Low Power Consumption: The device is designed to minimize power consumption, making it suitable for battery-powered applications.
• Easy Integration: The parallel interface simplifies integration with various systems and microcontrollers.

Advantages and Disadvantages

Advantages: - High-density storage capacity - Fast access time - Low power consumption - Long data retention period

Disadvantages: - Limited compatibility with certain interfaces - Higher cost compared to some alternative models

Working Principles

The MT28F008B3VG-9 TET TR utilizes Flash memory technology to store data. It employs a combination of floating-gate transistors and control circuitry to achieve non-volatile storage. When data is written, charges are trapped in the floating gates, representing the stored information. During read operations, the charges are sensed to retrieve the stored data.

Detailed Application Field Plans

The MT28F008B3VG-9 TET TR is widely used in various applications, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. MT28F008B5VG-10 TET TR

   • Similar specifications and features as the MT28F008B3VG-9 TET TR
   • Higher access speed (10 ns)
   • Available in the same TET TR package

2. MT28F008B1WG-12 B TR

   • Lower capacity (1 Megabit)
   • Faster access time (12 ns)
   • Supplied in a different package (B TR)

These alternative models provide options with varying specifications and characteristics to suit different application requirements.

Word count: 533 words