MT28F400B3WG-8 TET

Product Overview

Category

The MT28F400B3WG-8 TET belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The MT28F400B3WG-8 TET retains stored data even when power is turned off.
• High capacity: It offers a storage capacity of 4 gigabits (512 megabytes).
• Fast access time: The device provides quick read and write operations, ensuring efficient data transfer.
• Reliable: It has a high endurance level and can withstand numerous read and write cycles without data corruption.
• Low power consumption: The MT28F400B3WG-8 TET is designed to minimize energy usage, making it suitable for battery-powered devices.

Package and Quantity

The MT28F400B3WG-8 TET is available in a surface-mount package. Each package contains one unit of the memory device.

Specifications

• Memory Type: Flash memory
• Organization: 4 Gb (512 MB) x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Pin Configuration

The MT28F400B3WG-8 TET features a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. VSS
48. NC

Functional Features

• Erase and Program Operations: The MT28F400B3WG-8 TET supports both sector erase and byte program operations, allowing flexible data manipulation.
• Block Locking: It provides the option to lock specific memory blocks, preventing accidental modification or erasure of critical data.
• Error Correction Code (ECC): This device incorporates ECC algorithms to detect and correct bit errors, ensuring data integrity.

Advantages

• High storage capacity enables the handling of large amounts of data.
• Fast access time allows for quick retrieval and storage of information.
• Non-volatile nature ensures data persistence even during power loss.
• Low power consumption prolongs battery life in portable devices.
• Reliable endurance guarantees long-term usage without data corruption.

Disadvantages

• Limited write endurance: Frequent write operations may eventually degrade the memory cells.
• Higher cost compared to other types of memory technologies.
• Larger physical size compared to newer, more compact memory solutions.

Working Principles

The MT28F400B3WG-8 TET utilizes a floating-gate transistor structure to store data. It employs a combination of electrical charges to represent binary information (0s and 1s). The presence or absence of charge in the floating gate determines the stored data value.

Application Field Plans

The MT28F400B3WG-8 TET finds applications in various fields, including: - Computer systems: Used for BIOS storage and firmware updates. - Mobile devices: Provides non-volatile memory for operating systems and user data storage. - Automotive electronics: Utilized for storing critical system parameters and firmware. - Industrial control systems: Enables reliable data storage for process control and monitoring.

Alternative Models

• MT28F400B5WG-6 TET: A similar flash memory device with a higher capacity of 8 gigabits (1 gigabyte).
• MT28F200B3WG-10 TET: A lower-capacity variant with 2 gigabits (256 megabytes) of storage.

In conclusion, the MT28F400B3WG-8 TET is a high-capacity