MT28F400B5WG-8 B

Product Overview

Category

MT28F400B5WG-8 B belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Large storage capacity: Can store a significant amount of data.
• Compact size: Takes up minimal space in electronic devices.

Package

MT28F400B5WG-8 B is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT28F400B5WG-8 B lies in its ability to provide reliable and high-performance data storage for electronic devices.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of MT28F400B5WG-8 B flash memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb (Gigabits)
• Organization: 512 M x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (nanoseconds)
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The pin configuration of MT28F400B5WG-8 B is as follows:

1. VCC - Power supply voltage
2. A0-A19 - Address inputs
3. DQ0-DQ7 - Data input/output
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RY/BY# - Ready/Busy status
8. WP# - Write protect
9. VSS - Ground

Functional Features

• High-speed data transfer: MT28F400B5WG-8 B offers fast read and write operations, enabling efficient data transfer.
• Error correction: It incorporates error correction techniques to ensure data integrity.
• Block erase capability: Allows for the erasure of large blocks of data, facilitating efficient memory management.
• Low power consumption: Designed to minimize power usage, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Large storage capacity
• High-speed data transfer
• Compact size
• Low power consumption

Disadvantages

• Limited endurance: Flash memory has a finite number of program/erase cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F400B5WG-8 B utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When a voltage is applied, the trapped charges can be read or modified, allowing for data storage and retrieval.

Detailed Application Field Plans

MT28F400B5WG-8 B finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Portable media players 4. Solid-state drives (SSDs) 5. Embedded systems

Detailed and Complete Alternative Models

Some alternative models to MT28F400B5WG-8 B are: 1. Samsung K9F4G08U0D 2. Micron MT29F4G08ABADAWP 3. Toshiba TC58NVG0S3EBAI4

These models offer similar specifications and functionality, providing alternative options for flash memory requirements.

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