MT29F1G08ABBFAH4-ITE:F TR

Product Overview

Category

The MT29F1G08ABBFAH4-ITE:F TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABBFAH4-ITE:F TR offers a storage capacity of 1 gigabit (1 Gb).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.
• Long lifespan: The MT29F1G08ABBFAH4-ITE:F TR has a long endurance, making it suitable for applications that require frequent data writing.

Packaging/Quantity

The MT29F1G08ABBFAH4-ITE:F TR is typically packaged in surface mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 Mbps

Detailed Pin Configuration

The MT29F1G08ABBFAH4-ITE:F TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/busy status
8. DQ0-DQ7: Data input/output lines

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location for read and write operations.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes data evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick read and write operations.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.
• Long lifespan ensures durability and reliability.

Disadvantages

• Limited endurance: Frequent data writing may reduce the lifespan of the NAND flash memory.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F1G08ABBFAH4-ITE:F TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. When reading data, the stored charge is measured to determine the binary value. The device uses a combination of voltage levels and control signals to perform various operations such as programming, erasing, and reading.

Detailed Application Field Plans

The MT29F1G08ABBFAH4-ITE:F TR finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F1G08ABADAWP-ITE:F TR
2. MT29F1G08ABBDAH4-ITE:F TR
3. MT29F1G08ABBDAH4-ITE:F TR

These alternative models offer similar specifications and functionality to the MT29F1G08ABBFAH4-ITE:F TR, providing customers with options based on their specific requirements.

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