MT29F64G08CBABBWP-12:B

Product Overview

Category

The MT29F64G08CBABBWP-12:B belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBABBWP-12:B offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With a high-speed interface, this NAND flash memory chip enables quick data read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity.
• Low power consumption: The MT29F64G08CBABBWP-12:B is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a small form factor, making it suitable for integration into compact electronic devices.
• Robust packaging: The chip is enclosed in a protective package that shields it from external factors such as moisture and physical damage.

Specifications

• Model: MT29F64G08CBABBWP-12:B
• Storage Capacity: 64 GB
• Interface: NAND Flash
• Operating Voltage: 3.3V
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Package Type: Ball Grid Array (BGA)
• Package Dimensions: 14mm x 18mm
• Temperature Range: -40°C to +85°C

Pin Configuration

The detailed pin configuration of the MT29F64G08CBABBWP-12:B chip is as follows:

1. VCC
2. GND
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. A16
20. A17
21. A18
22. A19
23. A20
24. A21
25. A22
26. A23
27. A24
28. A25
29. A26
30. A27
31. A28
32. A29
33. A30
34. A31
35. CLE
36. ALE
37. RE#
38. WE#
39. WP#
40. R/B#
41. CE#
42. DQ0
43. DQ1
44. DQ2
45. DQ3
46. DQ4
47. DQ5
48. DQ6
49. DQ7

Functional Features

• Page Program: The chip supports fast and efficient page programming, allowing for quick data storage.
• Block Erase: It provides the capability to erase large blocks of data simultaneously, enhancing efficiency.
• Read and Write Operations: The MT29F64G08CBABBWP-12:B enables high-speed read and write operations, facilitating seamless data access.
• Error Correction Code (ECC): This feature ensures data integrity by detecting and correcting errors during data transfer.

Advantages

• High storage capacity meets the demands of modern electronic devices.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for easy integration into various electronic devices.
• Robust packaging protects the chip from external factors, ensuring durability.

Disadvantages

• The high storage capacity may result in a higher cost compared to lower-capacity alternatives.
• Limited compatibility with certain older devices that do not support NAND flash memory.

Working Principles

The MT29F64G08CBABBWP-12:B operates based on the principles of NAND flash memory technology. It utilizes a grid-like structure of memory cells that store data in a non-volatile manner. When data is written, electrical charges are stored within the memory cells, and these charges can be read back later. The chip employs various algorithms and error correction techniques to ensure reliable data storage and retrieval.

Application Field Plans

The MT29F64G08CBABBWP-12:B is widely used in the following application fields: 1. Smartphones and tablets: Provides ample storage for apps, media files, and user data. 2. Digital cameras: Enables high-capacity storage for photos and videos. 3. Solid-state drives (SSDs): Used as primary storage in SSDs, offering fast and reliable data access.

Alternative Models

For those seeking alternative options, the following NAND