MT29F64G08CECCBH1-12:C

Product Overview

Category

MT29F64G08CECCBH1-12:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CECCBH1-12:C offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures reliable and durable performance.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08CECCBH1-12:C comes in a compact package, enabling easy integration into various devices.

Package and Quantity

The MT29F64G08CECCBH1-12:C is available in a surface-mount package. The exact package dimensions and quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Part Number: MT29F64G08CECCBH1-12:C
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration for MT29F64G08CECCBH1-12:C is as follows:

| Pin Name | Description | |----------|-------------| | VCC | Power supply voltage | | GND | Ground | | CE# | Chip Enable | | CLE | Command Latch Enable | | ALE | Address Latch Enable | | RE# | Read Enable | | WE# | Write Enable | | R/B# | Ready/Busy Status | | DQ0-DQ7 | Data Input/Output |

Functional Features

• Block Erase: MT29F64G08CECCBH1-12:C supports block erase functionality, allowing for efficient erasure of large data blocks.
• Page Program: It enables fast and reliable programming of individual memory pages.
• Random Access: The NAND flash memory allows random access to any memory location, facilitating quick data retrieval.
• Error Correction Code (ECC): ECC algorithms are implemented to ensure data integrity and reliability.
• Wear Leveling: The wear leveling technique evenly distributes write operations across memory cells, extending the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabyte compared to traditional hard disk drives

Working Principles

MT29F64G08CECCBH1-12:C utilizes NAND flash memory technology. It consists of a grid of memory cells that store data in a series of floating-gate transistors. These transistors can be electrically programmed and erased, allowing for non-volatile data storage. The memory cells are organized into blocks, which can be individually erased or programmed.

To read data, the appropriate address is provided, and the stored charge in the memory cell is measured. To write data, the memory cell is programmed by applying a high voltage to the control gate. Erasing data involves applying a higher voltage to the entire block, resetting all memory cells within it.

Detailed Application Field Plans

MT29F64G08CECCBH1-12:C finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Below are some alternative models that offer similar functionality and can be considered as alternatives to MT29F64G08CECCBH1-12:C:

1. Samsung K9K8G08U0D
2. Toshiba TH58NVG6D2FLA89
3. Micron MT29F64G08CBABA

These models provide comparable storage capacity, interface compatibility, and performance characteristics.

In conclusion, MT29F64G08CECCBH1-12:C is a NAND flash memory device with high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices for data storage purposes.