PC28F256P30TFA

Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: TFBGA
• Essence: Provides reliable and efficient data storage for various electronic devices
• Packaging/Quantity: Available in bulk packaging, quantity depends on the supplier

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 minimum
• Data Retention: 20 years minimum

Pin Configuration

The PC28F256P30TFA has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. RY/BY#
46. WP#
47. RESET#
48. VSS

Functional Features

• High-speed read and write operations for efficient data access
• Reliable data storage with a long data retention period
• Low power consumption for energy-efficient operation
• Built-in error correction codes (ECC) for data integrity
• Support for various memory management techniques

Advantages and Disadvantages

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations enable quick access to stored data
• Non-volatile memory ensures data retention even when power is lost
• Suitable for a wide range of electronic devices
• ECC support enhances data reliability

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory
• Higher cost compared to other types of memory
• Requires additional circuitry for interfacing with the host device

Working Principles

The PC28F256P30TFA utilizes NAND flash memory technology. It stores data by trapping electrons in floating gate transistors, which can be electrically programmed and erased. When reading data, the stored charge in the floating gate is measured to determine the logic state.

During programming, a high voltage is applied to the control gate, allowing electrons to tunnel through the thin oxide layer and get trapped in the floating gate. Erasing is achieved by applying a higher voltage that removes the trapped electrons from the floating gate.

Application Field Plans

The PC28F256P30TFA is widely used in various electronic devices that require reliable and high-capacity data storage. Some of the application fields include:

1. Smartphones and tablets
2. Digital cameras
3. Solid-state drives (SSDs)
4. Automotive electronics
5. Industrial control systems
6. Embedded systems

Alternative Models

1. PC28F256P30TFE: Similar specifications and features, but with a different package (TSOP)
2. PC28F256P30TFAI: Extended temperature range (-40°C to +105°C)
3. PC28F256P30TFB: Higher capacity (512 Megabits)

These alternative models provide options based on specific requirements and preferences.

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