Nexperia USA Inc.
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PMBF170,215
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PMBF170,215

Product Overview

Category

The PMBF170,215 belongs to the category of field-effect transistors (FETs).

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

  • Low power dissipation
  • High input impedance
  • Fast switching speed

Package

The PMBF170,215 is typically available in a SOT23 package.

Essence

This FET is designed for low voltage applications and low current switching.

Packaging/Quantity

It is usually packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 25V
  • Continuous Drain Current (ID): 120mA
  • Total Power Dissipation: 250mW
  • Gate-Source Voltage (VGS): ±12V
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The PMBF170,215 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low threshold voltage
  • High input impedance
  • Fast switching speed

Advantages

  • Low power dissipation
  • Suitable for low voltage applications
  • Compact SOT23 package

Disadvantages

  • Limited maximum drain-source voltage
  • Relatively low continuous drain current rating

Working Principles

The PMBF170,215 operates based on the principle of controlling the flow of current between the drain and source terminals using the voltage applied to the gate terminal.

Detailed Application Field Plans

The PMBF170,215 is commonly used in the following applications: - Battery-powered circuits - Portable electronic devices - Low voltage switching circuits

Detailed and Complete Alternative Models

Some alternative models to the PMBF170,215 include: - BSS84 - DMG2305UX - MMBF170LT1G

In conclusion, the PMBF170,215 is a field-effect transistor with specific characteristics suitable for low voltage applications and low current switching. Its compact package and functional features make it a popular choice for various electronic circuits.

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Перечислите 10 распространенных вопросов и ответов, связанных с применением PMBF170,215 в технических решениях.

  1. What is PMBF170,215?

    • PMBF170,215 is a dual N-channel enhancement mode field-effect transistor (FET) designed for high-speed switching applications.

  2. What are the key features of PMBF170,215?

    • The key features include low threshold voltage, high input impedance, and fast switching speed.

  3. What are the typical applications of PMBF170,215?

    • PMBF170,215 is commonly used in high-speed switching applications such as digital circuits, level shifters, and line drivers.

  4. What is the maximum drain-source voltage rating for PMBF170,215?

    • The maximum drain-source voltage rating for PMBF170,215 is typically around 30V.

  5. What is the maximum drain current for PMBF170,215?

    • The maximum drain current for PMBF170,215 is typically around 100mA.

  6. What is the input capacitance of PMBF170,215?

    • The input capacitance of PMBF170,215 is typically in the range of a few picofarads.

  7. Is PMBF170,215 suitable for low-power applications?

    • Yes, PMBF170,215 is suitable for low-power applications due to its low threshold voltage and low input capacitance.

  8. What is the typical on-resistance of PMBF170,215?

    • The typical on-resistance of PMBF170,215 is relatively low, making it suitable for high-speed switching.

  9. Can PMBF170,215 be used in audio amplifier circuits?

    • While PMBF170,215 is not specifically designed for audio amplifier circuits, it can be used in certain low-power audio applications.

  10. Are there any specific layout considerations when using PMBF170,215 in a circuit?

    • It is important to minimize parasitic capacitance and ensure proper grounding to optimize the performance of PMBF170,215 in a circuit.