NXP USA Inc.
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PHB225NQ04T,118
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PHB225NQ04T,118

Product Overview

Category

PHB225NQ04T,118 belongs to the category of power MOSFETs.

Use

It is used for power management and switching applications in various electronic devices and systems.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirements

Package

The PHB225NQ04T,118 is typically available in a TO-263 package.

Essence

The essence of PHB225NQ04T,118 lies in its ability to efficiently control and manage power in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 250 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 75A
  • RDS(ON) (Max) @ VGS = 10V: 2.25mΩ
  • Gate-Source Voltage (VGS) (Max): ±20V
  • Total Power Dissipation (PD): 300W

Detailed Pin Configuration

The pin configuration of PHB225NQ04T,118 typically includes three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Robustness against overcurrent and overvoltage conditions

Advantages

  • High power handling capacity
  • Low on-state resistance leading to reduced power dissipation
  • Fast switching speed for improved efficiency
  • Suitable for high-frequency applications

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

PHB225NQ04T,118 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can effectively switch and regulate power flow within a circuit.

Detailed Application Field Plans

PHB225NQ04T,118 finds extensive application in various fields such as: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to PHB225NQ04T,118 include: - IRF3205 - FDP8870 - STP55NF06L - AUIRF1404Z

In conclusion, PHB225NQ04T,118 is a high-performance power MOSFET that offers efficient power management and switching capabilities for a wide range of electronic applications.

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Перечислите 10 распространенных вопросов и ответов, связанных с применением PHB225NQ04T,118 в технических решениях.

  1. What is the maximum drain-source voltage of PHB225NQ04T,118?

    • The maximum drain-source voltage of PHB225NQ04T,118 is 40V.

  2. What is the continuous drain current of PHB225NQ04T,118?

    • The continuous drain current of PHB225NQ04T,118 is 120A.

  3. What is the on-resistance of PHB225NQ04T,118?

    • The on-resistance of PHB225NQ04T,118 is typically 2.5mΩ at Vgs=10V.

  4. Can PHB225NQ04T,118 be used in automotive applications?

    • Yes, PHB225NQ04T,118 is suitable for automotive applications.

  5. What is the operating temperature range of PHB225NQ04T,118?

    • The operating temperature range of PHB225NQ04T,118 is -55°C to 175°C.

  6. Does PHB225NQ04T,118 have built-in ESD protection?

    • Yes, PHB225NQ04T,118 features built-in ESD protection.

  7. What is the gate threshold voltage of PHB225NQ04T,118?

    • The gate threshold voltage of PHB225NQ04T,118 is typically 2.5V.

  8. Is PHB225NQ04T,118 RoHS compliant?

    • Yes, PHB225NQ04T,118 is RoHS compliant.

  9. What package type does PHB225NQ04T,118 come in?

    • PHB225NQ04T,118 is available in a Power-Flat package.

  10. Can PHB225NQ04T,118 be used in high-power industrial applications?

    • Yes, PHB225NQ04T,118 is suitable for high-power industrial applications.