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2N7000-D75Z

2N7000-D75Z

Product Overview

The 2N7000-D75Z is a small-signal N-channel MOSFET transistor. It falls under the category of electronic components and is commonly used in various electronic circuits for switching and amplification purposes. The transistor exhibits characteristics such as low threshold voltage, high input impedance, and low output capacitance. It is typically packaged in a TO-92 package and is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 200mA
  • Total Power Dissipation: 350mW
  • Gate-Source Voltage (VGS): ±20V
  • Operating and Storage Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 2N7000-D75Z features three pins: the gate (G), drain (D), and source (S). The pinout configuration is as follows: - Gate (G) - Pin 1 - Drain (D) - Pin 2 - Source (S) - Pin 3

Functional Features

This MOSFET transistor offers high input impedance, making it suitable for use in circuits where minimal loading of the driving circuit is desired. Additionally, its low threshold voltage allows for efficient control of the transistor's conductivity.

Advantages and Disadvantages

Advantages: - Low threshold voltage - High input impedance - Low output capacitance

Disadvantages: - Limited maximum drain-source voltage - Moderate continuous drain current rating

Working Principles

The 2N7000-D75Z operates based on the principles of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, the transistor enters a conductive state, allowing current to flow between the drain and source.

Detailed Application Field Plans

The 2N7000-D75Z finds applications in various electronic circuits, including but not limited to: - Switching circuits - Amplifier circuits - Level shifting circuits - Signal processing circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N7000-D75Z include: - BS170 - IRF530 - 2N7002 - NDP6020P

In conclusion, the 2N7000-D75Z MOSFET transistor serves as a versatile component in electronic circuits, offering high input impedance and low threshold voltage. Its compact TO-92 package and compatibility with tape and reel packaging make it suitable for mass production and integration into various electronic devices and systems.

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Перечислите 10 распространенных вопросов и ответов, связанных с применением 2N7000-D75Z в технических решениях.

  1. What is the maximum drain-source voltage for 2N7000-D75Z?

    • The maximum drain-source voltage for 2N7000-D75Z is 60V.
  2. What is the continuous drain current rating of 2N7000-D75Z?

    • The continuous drain current rating of 2N7000-D75Z is 200mA.
  3. Can 2N7000-D75Z be used for low-power switching applications?

    • Yes, 2N7000-D75Z is suitable for low-power switching applications due to its low threshold voltage and low on-resistance.
  4. What is the typical threshold voltage of 2N7000-D75Z?

    • The typical threshold voltage of 2N7000-D75Z is around 2.1V.
  5. Is 2N7000-D75Z suitable for level shifting applications?

    • Yes, 2N7000-D75Z can be used for level shifting due to its low threshold voltage and compatibility with different logic levels.
  6. What are the typical applications of 2N7000-D75Z in technical solutions?

    • Typical applications include low-voltage switching, level shifting, signal amplification, and interface circuits.
  7. Does 2N7000-D75Z require a heat sink for normal operation?

    • No, 2N7000-D75Z typically does not require a heat sink for normal operation due to its low power dissipation.
  8. What is the maximum junction temperature for 2N7000-D75Z?

    • The maximum junction temperature for 2N7000-D75Z is 150°C.
  9. Can 2N7000-D75Z be used in battery-powered applications?

    • Yes, 2N7000-D75Z is suitable for battery-powered applications due to its low power consumption and low threshold voltage.
  10. Are there any specific layout considerations when using 2N7000-D75Z in a circuit?

    • It is recommended to minimize the length of high-current paths and provide adequate decoupling to ensure stable operation when using 2N7000-D75Z in a circuit.