ON Semiconductor
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MJD112RLG
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MJD112RLG

Product Overview

Category

The MJD112RLG belongs to the category of power transistors.

Use

It is commonly used in electronic circuits for amplification and switching applications.

Characteristics

  • High voltage capability
  • Low spread of dynamic parameters
  • Very high switching speed
  • Extremely rugged

Package

The MJD112RLG is typically available in a TO-252 package.

Essence

This power transistor is essential for controlling high-power loads in various electronic devices.

Packaging/Quantity

It is usually packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 3A
  • Power Dissipation (PD): 2W
  • DC Current Gain (hFE): 40 to 400
  • Transition Frequency (ft): 50MHz

Detailed Pin Configuration

The MJD112RLG has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High voltage capability allows for use in various applications.
  • Low spread of dynamic parameters ensures consistent performance.
  • Very high switching speed enables rapid response in switching applications.

Advantages

  • Rugged construction makes it durable and reliable.
  • Suitable for high-power applications due to its high voltage capability.

Disadvantages

  • May require careful handling due to its sensitivity to static electricity.
  • Higher cost compared to standard transistors.

Working Principles

The MJD112RLG operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal, resulting in a larger current flow between the collector and emitter terminals.

Detailed Application Field Plans

The MJD112RLG is widely used in: - Power supply circuits - Motor control circuits - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to the MJD112RLG include: - TIP31C - 2N3055 - BD139

In conclusion, the MJD112RLG power transistor offers high voltage capability, fast switching speed, and rugged construction, making it suitable for a wide range of electronic applications. Its use in power supply circuits, motor control circuits, and audio amplifiers demonstrates its versatility and reliability in various fields.

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Перечислите 10 распространенных вопросов и ответов, связанных с применением MJD112RLG в технических решениях.

  1. What is the MJD112RLG?

    • The MJD112RLG is a NPN Darlington transistor designed for high-voltage applications.

  2. What are the key features of the MJD112RLG?

    • It has a high DC current gain, low collector-emitter saturation voltage, and is designed for high-voltage applications.

  3. What are the typical applications of the MJD112RLG?

    • It is commonly used in power management, motor control, and other high-voltage switching applications.

  4. What is the maximum collector-emitter voltage of the MJD112RLG?

    • The maximum collector-emitter voltage is 100V.

  5. What is the maximum collector current of the MJD112RLG?

    • The maximum collector current is 8A.

  6. What is the thermal resistance of the MJD112RLG?

    • The thermal resistance is typically 62°C/W.

  7. Is the MJD112RLG RoHS compliant?

    • Yes, it is RoHS compliant.

  8. What is the package type of the MJD112RLG?

    • It comes in a DPAK (TO-252) package.

  9. Can the MJD112RLG be used for high-frequency applications?

    • No, it is not recommended for high-frequency applications due to its design for high-voltage switching.

  10. Are there any specific considerations for driving the MJD112RLG in a circuit?

    • It is important to ensure proper heat sinking and drive the transistor within its specified operating conditions to maximize performance and reliability.