ON Semiconductor
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MMBTH10LT1G
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MMBTH10LT1G

Product Overview

Category

The MMBTH10LT1G belongs to the category of small signal transistors.

Use

It is commonly used for amplification and switching of electronic signals in various applications.

Characteristics

  • Small size
  • Low power consumption
  • High gain
  • Fast switching speed

Package

The MMBTH10LT1G is typically available in a SOT-23 package.

Essence

This transistor is essential for electronic circuit design, especially in low-power applications.

Packaging/Quantity

The MMBTH10LT1G is usually packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Maximum Collector-Base Voltage: 40V
  • Maximum Collector Current: 600mA
  • Power Dissipation: 225mW
  • Transition Frequency: 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MMBTH10LT1G has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability
  • Low leakage current
  • Excellent high-frequency performance

Advantages

  • Small form factor
  • Suitable for low-power applications
  • Wide operating temperature range

Disadvantages

  • Limited maximum collector current
  • Relatively low power dissipation capability

Working Principles

The MMBTH10LT1G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The MMBTH10LT1G is widely used in the following applications: - Audio amplifiers - Signal processing circuits - Switching circuits - Oscillator circuits

Detailed and Complete Alternative Models

Some alternative models to the MMBTH10LT1G include: - 2N3904 - BC547 - 2SC945 - PN2222A

In conclusion, the MMBTH10LT1G is a versatile small signal transistor with a wide range of applications, making it an essential component in electronic circuit design.

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Перечислите 10 распространенных вопросов и ответов, связанных с применением MMBTH10LT1G в технических решениях.

  1. What is MMBTH10LT1G?

    • MMBTH10LT1G is a high-performance NPN bipolar transistor designed for general-purpose amplifier and switching applications.

  2. What are the key features of MMBTH10LT1G?

    • The key features of MMBTH10LT1G include low saturation voltage, high current gain, and high transition frequency.

  3. What are the typical applications of MMBTH10LT1G?

    • Typical applications of MMBTH10LT1G include audio amplification, signal processing, and low-power switching circuits.

  4. What is the maximum collector current of MMBTH10LT1G?

    • The maximum collector current of MMBTH10LT1G is 300mA.

  5. What is the maximum power dissipation of MMBTH10LT1G?

    • The maximum power dissipation of MMBTH10LT1G is 225mW.

  6. What is the operating temperature range of MMBTH10LT1G?

    • The operating temperature range of MMBTH10LT1G is -55°C to 150°C.

  7. Is MMBTH10LT1G RoHS compliant?

    • Yes, MMBTH10LT1G is RoHS compliant, making it suitable for environmentally friendly designs.

  8. What is the typical transition frequency of MMBTH10LT1G?

    • The typical transition frequency of MMBTH10LT1G is 250MHz.

  9. Does MMBTH10LT1G require any special handling or storage conditions?

    • MMBTH10LT1G should be stored in an anti-static bag and handled with appropriate ESD precautions to prevent damage.

  10. Where can I find detailed technical specifications and application notes for MMBTH10LT1G?

    • Detailed technical specifications and application notes for MMBTH10LT1G can be found on the manufacturer's website or in the product datasheet.