NGTB15N60R2FG

Product Category: Power Transistor

Basic Information Overview: - Category: Power semiconductor - Use: Amplification and switching of electrical signals in power electronics applications - Characteristics: High voltage and current handling capability, low on-state resistance, fast switching speed - Package: TO-263-3 (D2PAK) package - Essence: Efficient power management and control - Packaging/Quantity: Typically packaged in reels of 1000 units

Specifications: - Voltage Rating: 600V - Current Rating: 15A - On-State Resistance: 0.25Ω - Switching Speed: <100ns

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - High voltage capability for power applications - Low on-state resistance for reduced power dissipation - Fast switching speed for improved efficiency

Advantages: - High voltage and current handling capability - Low on-state resistance - Fast switching speed

Disadvantages: - Sensitivity to overvoltage conditions - Heat dissipation challenges at high currents

Working Principles: The NGTB15N60R2FG operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - Inverters - Audio amplifiers

Detailed and Complete Alternative Models: - IRFP460 (International Rectifier) - FGA60N65SMD (Fairchild Semiconductor) - STW20NM60 (STMicroelectronics)

This comprehensive entry provides a detailed overview of the NGTB15N60R2FG power transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.