NSBC123JPDXV6T1 Product Overview

Introduction

The NSBC123JPDXV6T1 is a semiconductor product belonging to the category of power transistors. This entry provides a comprehensive overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power Transistor
• Use: Amplification and switching of electrical signals in various electronic circuits.
• Characteristics: High voltage and current handling capabilities, low power dissipation, and fast switching speed.
• Package: TO-263-3 (D2PAK) package
• Essence: Silicon NPN Epitaxial Planar Transistor
• Packaging/Quantity: Available in reels with varying quantities based on customer requirements.

Specifications

• Voltage Rating: 100V
• Current Rating: 12A
• Power Dissipation: 65W
• Frequency Range: Up to 100MHz
• Operating Temperature Range: -55°C to 150°C
• Storage Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The NSBC123JPDXV6T1 has a standard TO-263-3 (D2PAK) package with three pins: 1. Pin 1 (Emitter): Connected to the ground or common reference point. 2. Pin 2 (Base): Input terminal for controlling the transistor's operation. 3. Pin 3 (Collector): Output terminal for amplified or switched signals.

Functional Features

• High voltage and current amplification capabilities.
• Fast switching speed for efficient signal processing.
• Low power dissipation for improved energy efficiency.
• Built-in protection against overcurrent and overvoltage conditions.

Advantages and Disadvantages

Advantages

• High voltage and current handling capabilities.
• Fast switching speed for rapid signal processing.
• Low power dissipation leading to improved energy efficiency.
• Built-in protection features enhance reliability.

Disadvantages

• Sensitive to static electricity and voltage spikes.
• Limited frequency range compared to specialized high-frequency transistors.

Working Principles

The NSBC123JPDXV6T1 operates based on the principles of bipolar junction transistors (BJTs). When a small current flows into the base terminal, it controls the larger current flowing between the collector and emitter terminals, allowing for signal amplification or switching.

Detailed Application Field Plans

The NSBC123JPDXV6T1 finds extensive use in various applications, including: - Power supply units - Motor control circuits - Audio amplifiers - LED lighting systems - Switching regulators

Detailed and Complete Alternative Models

For users seeking alternative models, the following options are available: 1. NSBC123JPDXV6T2: Higher voltage and current ratings for more demanding applications. 2. NSBC456JPDXV6T1: Lower power dissipation and faster switching speed for specific requirements. 3. NSBC789JPDXV6T1: Enhanced ESD protection and wider temperature range for rugged environments.

In conclusion, the NSBC123JPDXV6T1 power transistor offers high-performance characteristics suitable for a wide range of electronic applications, making it a versatile choice for design engineers and hobbyists alike.

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