BR93G56FJ-3GTE2

Product Overview

Category: Integrated Circuit (IC)

Use: Data storage and retrieval

Characteristics: - Non-volatile memory - Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) - Low power consumption - High reliability - Small form factor

Package: SOP-8 (Small Outline Package)

Essence: BR93G56FJ-3GTE2 is a serial EEPROM IC that provides non-volatile data storage and retrieval capabilities. It is commonly used in various electronic devices for storing configuration settings, calibration data, and other small amounts of information.

Packaging/Quantity: The BR93G56FJ-3GTE2 is typically sold in reels or tubes containing multiple units. The exact quantity depends on the supplier and customer requirements.

Specifications

• Memory Capacity: 2K bits (256 bytes)
• Interface: Serial I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The BR93G56FJ-3GTE2 IC has eight pins arranged in a Small Outline Package (SOP-8) configuration:

1. VCC: Power supply voltage input
2. SDA: Serial data input/output for I2C communication
3. SCL: Serial clock input for I2C communication
4. WP: Write protect pin (optional, can be left unconnected)
5. GND: Ground reference
6. NC: No connection (unused pin)
7. NC: No connection (unused pin)
8. CS: Chip select input for device enable/disable

Functional Features

• High-speed data transfer: The BR93G56FJ-3GTE2 supports I2C communication protocol, allowing for fast and efficient data transfer between the IC and the microcontroller.
• Low power consumption: The IC is designed to operate with minimal power requirements, making it suitable for battery-powered devices or applications where power efficiency is crucial.
• Write protection: The optional write protect pin (WP) allows users to enable or disable write operations, providing an additional layer of security for stored data.
• High reliability: With a write endurance of 1 million cycles and data retention of 100 years, the BR93G56FJ-3GTE2 ensures long-term reliability for critical data storage applications.

Advantages and Disadvantages

Advantages: - Compact size and small form factor - Wide operating voltage range - High-speed data transfer - Low power consumption - High reliability and long data retention

Disadvantages: - Limited memory capacity (256 bytes) - Requires external microcontroller or host device for data access and control

Working Principles

The BR93G56FJ-3GTE2 operates based on the principles of EEPROM technology. It utilizes electrically controlled floating gate transistors to store and retrieve data. When data needs to be written, a high voltage is applied to the gate of the transistor, causing electrons to tunnel through a thin oxide layer and become trapped in the floating gate. This trapped charge represents the stored data. To read the data, the transistor's conduction is measured, determining whether it is storing a logical "0" or "1".

Detailed Application Field Plans

The BR93G56FJ-3GTE2 is widely used in various electronic devices and applications, including but not limited to: - Consumer electronics (e.g., TVs, set-top boxes, audio players) - Automotive electronics (e.g., infotainment systems, engine control units) - Industrial automation (e.g., sensors, programmable logic controllers) - Medical devices (e.g., patient monitoring systems, diagnostic equipment) - Smart home appliances (e.g., smart thermostats, security systems)

Detailed and Complete Alternative Models

• BR93G46FJ-3GTE2: 1K-bit serial EEPROM with similar specifications and package.
• BR93G66FJ-3GTE2: 4K-bit serial EEPROM with similar specifications and package.
• BR93H56FJ-3GTE2: 2K-bit serial EEPROM with extended operating temperature range (-40°C to +125°C).

These alternative models offer different memory capacities or operating temperature ranges while maintaining compatibility with the BR93G56FJ-3GTE2 in terms of pin configuration and functionality.

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