DTA124EMT2L

Introduction

The DTA124EMT2L is a semiconductor device belonging to the category of bipolar transistors. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Bipolar Transistor
• Use: Amplification and Switching in Electronic Circuits
• Characteristics: High Gain, Low Noise, Medium Power
• Package: SOT-416 (EMT2)
• Essence: NPN Silicon Epitaxial Planar Transistor
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• Power Dissipation (PD): 150mW
• Transition Frequency (fT): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The DTA124EMT2L has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

• High current gain (hFE) of 100 to 400 at IC = 10mA
• Low noise figure
• Suitable for low-power amplification applications

Advantages and Disadvantages

Advantages

• Small package size
• High transition frequency
• Low power dissipation

Disadvantages

• Limited collector current compared to higher power transistors
• Limited voltage ratings

Working Principles

The DTA124EMT2L operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the current flowing into the base terminal.

Detailed Application Field Plans

This transistor is commonly used in low-power amplification circuits, signal processing, and switching applications in electronic devices such as audio amplifiers, sensor interfaces, and small signal switches.

Detailed and Complete Alternative Models

Some alternative models to the DTA124EMT2L include: - DTC124EMT2L - DTC144EMT2L - DTC114EMT2L

In conclusion, the DTA124EMT2L is a versatile bipolar transistor suitable for various low-power electronic applications, offering high gain and low noise characteristics within a compact package.

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