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2SD2016
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2SD2016 Transistor

Product Overview

Category

The 2SD2016 is a silicon NPN epitaxial planar transistor.

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

  • Low collector-emitter saturation voltage
  • High current capability
  • Fast switching speed

Package

The 2SD2016 is typically available in a TO-220 package.

Essence

This transistor is essential for amplifying and switching electronic signals.

Packaging/Quantity

It is usually sold in reels or tubes containing multiple units.

Specifications

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 7A
  • Power Dissipation (PD): 25W
  • Transition Frequency (fT): 30MHz

Detailed Pin Configuration

The 2SD2016 has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages and Disadvantages

Advantages

  • High current capability
  • Low collector-emitter saturation voltage
  • Fast switching speed

Disadvantages

  • Limited power dissipation capability
  • Moderate transition frequency

Working Principles

The 2SD2016 operates based on the principles of semiconductor physics, utilizing the movement of charge carriers to control the flow of current through the device.

Detailed Application Field Plans

The 2SD2016 is widely used in various electronic applications such as: - Switching circuits - Amplifier circuits - Motor control systems

Detailed and Complete Alternative Models

Some alternative models to the 2SD2016 include: - 2N3055 - TIP31 - BD139

In conclusion, the 2SD2016 transistor is a versatile component with high current capability and fast switching speed, making it suitable for a wide range of electronic applications.

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Перечислите 10 распространенных вопросов и ответов, связанных с применением 2SD2016 в технических решениях.

  1. What is the maximum collector current of 2SD2016?

    • The maximum collector current of 2SD2016 is 1.5A.

  2. What is the maximum collector-emitter voltage of 2SD2016?

    • The maximum collector-emitter voltage of 2SD2016 is 60V.

  3. What are the typical applications of 2SD2016?

    • 2SD2016 is commonly used in audio amplifier circuits, power supply circuits, and general switching applications.

  4. What is the gain (hFE) of 2SD2016?

    • The gain (hFE) of 2SD2016 typically ranges from 40 to 320.

  5. What is the power dissipation of 2SD2016?

    • The power dissipation of 2SD2016 is 1.25W.

  6. Is 2SD2016 suitable for high-frequency applications?

    • No, 2SD2016 is not recommended for high-frequency applications due to its relatively low transition frequency.

  7. Can 2SD2016 be used in a Darlington configuration?

    • Yes, 2SD2016 can be used in a Darlington configuration to achieve higher current gain.

  8. What are the thermal characteristics of 2SD2016?

    • The thermal resistance junction to case (RthJC) of 2SD2016 is typically 5°C/W.

  9. Does 2SD2016 require a heat sink in typical applications?

    • It is recommended to use a heat sink when operating 2SD2016 near its maximum power dissipation to ensure proper thermal management.

  10. Are there any common failure modes associated with 2SD2016?

    • Common failure modes include thermal runaway at high currents and voltage breakdown under excessive collector-emitter voltage. Proper circuit design and thermal management can mitigate these risks.