GP1UE287YK

Product Overview

• Category: Optoelectronics
• Use: Infrared Emitting Diode
• Characteristics: High power output, compact size, low power consumption
• Package: Surface mount package
• Essence: Infrared light emission
• Packaging/Quantity: Tape and reel packaging, 3000 units per reel

Specifications

• Wavelength: 940nm
• Forward Current: 100mA
• Forward Voltage: 1.35V
• Radiant Intensity: 20mW/sr

Detailed Pin Configuration

The GP1UE287YK has a standard 2-pin configuration with the anode and cathode for easy integration into circuit designs.

Functional Features

• High radiant intensity
• Low forward voltage
• Wide operating temperature range
• Fast response time

Advantages and Disadvantages

Advantages

• Compact size
• Low power consumption
• High power output

Disadvantages

• Limited peak wavelength range
• Sensitive to reverse voltage

Working Principles

The GP1UE287YK operates by converting electrical energy into infrared light through the process of electroluminescence. When a forward voltage is applied, electrons and holes recombine in the semiconductor material, emitting infrared radiation.

Detailed Application Field Plans

The GP1UE287YK is suitable for various applications including: - Infrared sensing - Remote controls - Proximity sensors - Optical encoders

Detailed and Complete Alternative Models

• GP1UX311QS
• GP1UW702QS
• GP1UX511QS

In conclusion, the GP1UE287YK is a high-performance infrared emitting diode with compact dimensions and efficient power usage, making it ideal for a wide range of optoelectronic applications.

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