2SA1382,T6MIBF(J)

Product Category

The 2SA1382,T6MIBF(J) belongs to the category of semiconductor devices, specifically a PNP silicon transistor.

Basic Information Overview

• Category: Semiconductor device
• Use: Amplification and switching in electronic circuits
• Characteristics: High voltage capability, low saturation voltage, high current gain
• Package: TO-220F package
• Essence: Power transistor for general-purpose applications
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

• Maximum Collector-Base Voltage (Vcbo): 160V
• Maximum Collector-Emitter Voltage (Vceo): 160V
• Maximum Emitter-Base Voltage (Vebo): 5V
• Maximum Collector Current (Ic): 3A
• Power Dissipation (Pd): 20W
• Transition Frequency (ft): 30MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High voltage capability allows for use in various power applications
• Low saturation voltage ensures minimal power loss during operation
• High current gain enables efficient amplification of signals

Advantages and Disadvantages

Advantages: - Suitable for general-purpose applications - High voltage and current capabilities - Low saturation voltage

Disadvantages: - Limited frequency response compared to specialized transistors - Sensitive to temperature variations

Working Principles

The 2SA1382,T6MIBF(J) operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the current at the base terminal.

Detailed Application Field Plans

This transistor is commonly used in audio amplifiers, power supply circuits, motor control, and other general-purpose electronic applications requiring medium power amplification and switching.

Detailed and Complete Alternative Models

• 2SC3503
• 2N3906
• BC557

This information provides a comprehensive overview of the 2SA1382,T6MIBF(J) semiconductor device, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.