VS-115CNQ015ASMPBF

Product Category: Power Semiconductor

Basic Information Overview: - Category: Schottky Diode - Use: Rectification and power supply applications - Characteristics: High efficiency, low forward voltage drop, fast switching speed - Package: TO-263AB (D2PAK) - Essence: Silicon Carbide (SiC) Schottky diode - Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications: - Voltage Rating: 150V - Current Rating: 115A - Forward Voltage Drop: 1.35V at 25°C - Reverse Recovery Time: <20ns - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1: Anode - Pin 2: Cathode - Pin 3: Cathode

Functional Features: - Ultra-fast recovery time - Low reverse recovery current - High surge capability - High operating temperature range

Advantages: - Higher efficiency compared to standard silicon diodes - Reduced heat dissipation - Compact package size

Disadvantages: - Higher cost compared to traditional silicon diodes - Sensitivity to overvoltage conditions

Working Principles: The VS-115CNQ015ASMPBF operates based on the Schottky barrier principle, utilizing the metal-semiconductor junction to enable fast switching and low forward voltage drop characteristics.

Detailed Application Field Plans: This diode is suitable for various power supply and rectification applications, including switch-mode power supplies, motor drives, and solar inverters. Its high surge capability makes it ideal for use in systems with transient load conditions.

Detailed and Complete Alternative Models: 1. STPSC2006CWY - 600V, 20A SiC Schottky diode 2. C3D02060E - 600V, 2A Silicon Carbide Schottky diode 3. MBRF20100CT - 100V, 20A Schottky diode

This comprehensive entry provides a detailed overview of the VS-115CNQ015ASMPBF, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.