SI1072X-T1-GE3

Product Category: Semiconductor Devices

Basic Information Overview: - Category: Power MOSFET - Use: Power management in electronic devices - Characteristics: High efficiency, low on-resistance, fast switching speed - Package: DFN (Dual Flat No-Lead) - Essence: Efficient power control and management - Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications: - Voltage Rating: 30V - Continuous Drain Current: 40A - RDS(ON): 2.5mΩ - Gate Charge: 18nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected

Functional Features: - Low on-resistance for minimal power loss - Fast switching speed for efficient power management - Enhanced thermal performance for reliability

Advantages: - High efficiency - Compact package size - Suitable for high-frequency applications

Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: The SI1072X-T1-GE3 operates by controlling the flow of power through the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, the MOSFET allows current to flow between the drain and source, enabling effective power management.

Detailed Application Field Plans: - DC-DC Converters - Motor Control - Battery Management Systems - LED Lighting - Power Supplies

Detailed and Complete Alternative Models: - SI7157DP-T1-GE3 - SI2302CDS-T1-GE3 - SI7469DP-T1-GE3

This comprehensive entry provides an in-depth understanding of the SI1072X-T1-GE3 Power MOSFET, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.