SI1926DL-T1-GE3

Product Overview

Category

The SI1926DL-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• High power handling capability
• Low on-state resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI1926DL-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 20A
• RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
• Gate-Source Voltage (VGS) (Max): ±20V
• Total Gate Charge (Qg): 14nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI1926DL-T1-GE3 features a standard SO-8 pin configuration: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

• Low on-state resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability in high-power applications

Advantages

• High power handling capability
• Efficient power management
• Compact and space-saving package

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SI1926DL-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

This MOSFET is widely used in various applications including: - Switching power supplies - DC-DC converters - Motor control - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI1926DL-T1-GE3 include: - SI2306DS-T1-GE3 - SI2319DS-T1-GE3 - SI2333DDS-T1-GE3

In conclusion, the SI1926DL-T1-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it an essential component in modern electronic systems.

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