SI2300DS-T1-GE3

Product Overview

• Category: Semiconductor
• Use: Power MOSFET for switching applications
• Characteristics: Low on-resistance, high-speed switching, small package size
• Package: SOT-23
• Essence: Efficient power management
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Voltage Rating: 20V
• Continuous Drain Current: 2.5A
• RDS(ON): 0.08Ω
• Gate Threshold Voltage: 1-2V
• Maximum Power Dissipation: 1.25W

Detailed Pin Configuration

• Pin 1 (G): Gate
• Pin 2 (D): Drain
• Pin 3 (S): Source

Functional Features

• Fast switching speed
• Low gate drive power
• Enhanced thermal performance

Advantages and Disadvantages

• Advantages:
  • Low on-resistance
  • Small package size
  • High-speed switching
• Disadvantages:
  • Limited voltage rating
  • Sensitivity to static discharge

Working Principles

The SI2300DS-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current.

Detailed Application Field Plans

• Battery Management Systems: Efficient power switching in battery protection circuits
• DC-DC Converters: High-speed switching for voltage regulation
• LED Lighting: Control of LED driver circuits

Detailed and Complete Alternative Models

• SI2301DS-T1-GE3: Similar specifications with a different package (SOT-23)
• SI2302DS-T1-GE3: Higher voltage rating and current handling capabilities

This comprehensive entry provides detailed information about the SI2300DS-T1-GE3, covering its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.