SIE726DF-T1-GE3

Introduction

The SIE726DF-T1-GE3 is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

• Category: Power MOSFET
• Use: Power switching and amplification in electronic circuits
• Characteristics: High voltage tolerance, low on-resistance, fast switching speed
• Package: TO-263-7L
• Essence: Efficient power management and control
• Packaging/Quantity: Typically packaged in reels of 3000 units

Specifications

• Voltage Rating: 100V
• Current Rating: 30A
• On-Resistance: 8mΩ
• Gate Threshold Voltage: 2V
• Maximum Power Dissipation: 2.5W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SIE726DF-T1-GE3 has a TO-263-7L package with the following pin configuration: 1. Source 2. Gate 3. Drain 4. N/C 5. N/C 6. Source 7. Drain

Functional Features

• High Voltage Tolerance: Allows for use in high-power applications
• Low On-Resistance: Minimizes power loss and heat generation
• Fast Switching Speed: Enables efficient power control and management

Advantages and Disadvantages

Advantages

• Efficient power management
• Low power dissipation
• Fast switching speed

Disadvantages

• Sensitivity to static electricity
• Limited maximum power dissipation

Working Principles

The SIE726DF-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SIE726DF-T1-GE3 is commonly used in the following application fields: - Switching power supplies - Motor control - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

• SIE727DF-T1-GE3
• SIE728DF-T1-GE3
• SIE729DF-T1-GE3

In conclusion, the SIE726DF-T1-GE3 power MOSFET offers efficient power management and control, making it an essential component in various electronic applications.

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