Изображение может быть репрезентативным.
Подробную информацию о продукте см. в характеристиках.
SIHA20N50E-E3

SIHA20N50E-E3

Product Overview

The SIHA20N50E-E3 belongs to the category of power MOSFETs and is commonly used in electronic devices and power supply applications. This MOSFET is known for its high efficiency, low on-resistance, and fast switching characteristics. It is typically packaged in a TO-220 package and is available in various quantities to suit different production needs.

Specifications

  • Voltage Rating: 500V
  • Current Rating: 20A
  • Package Type: TO-220
  • On-Resistance: Low
  • Switching Speed: Fast

Detailed Pin Configuration

The SIHA20N50E-E3 follows the standard pin configuration for a TO-220 package, with three pins: gate, drain, and source.

Functional Features

  • High Efficiency: The SIHA20N50E-E3 offers high efficiency due to its low on-resistance, making it suitable for power conversion applications.
  • Fast Switching: This MOSFET has fast switching characteristics, reducing switching losses in electronic circuits.
  • Reliable Performance: It is designed to provide reliable and stable performance in various operating conditions.

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to voltage spikes

Working Principles

The SIHA20N50E-E3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate the flow of power in electronic circuits.

Detailed Application Field Plans

The SIHA20N50E-E3 is widely used in the following applications: - Power supplies - Motor control - Inverters - Switched-mode power supplies (SMPS) - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the SIHA20N50E-E3 include: - IRF840 - FQP30N06L - STP55NF06L - IRLB8748

In conclusion, the SIHA20N50E-E3 power MOSFET offers high efficiency, fast switching, and reliable performance, making it suitable for various power electronics applications.

[Word count: 298]

Перечислите 10 распространенных вопросов и ответов, связанных с применением SIHA20N50E-E3 в технических решениях.

  1. What is the maximum drain-source voltage of SIHA20N50E-E3?

    • The maximum drain-source voltage of SIHA20N50E-E3 is 500V.
  2. What is the continuous drain current rating of SIHA20N50E-E3?

    • The continuous drain current rating of SIHA20N50E-E3 is 20A.
  3. What is the on-state resistance (RDS(on)) of SIHA20N50E-E3?

    • The on-state resistance (RDS(on)) of SIHA20N50E-E3 is typically 0.25 ohms.
  4. What is the gate threshold voltage of SIHA20N50E-E3?

    • The gate threshold voltage of SIHA20N50E-E3 is typically 4V.
  5. What are the typical applications for SIHA20N50E-E3?

    • SIHA20N50E-E3 is commonly used in power supplies, motor control, and lighting applications.
  6. What is the operating temperature range of SIHA20N50E-E3?

    • The operating temperature range of SIHA20N50E-E3 is -55°C to 150°C.
  7. Does SIHA20N50E-E3 have built-in protection features?

    • SIHA20N50E-E3 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
  8. Is SIHA20N50E-E3 suitable for high-frequency switching applications?

    • Yes, SIHA20N50E-E3 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.
  9. What is the package type of SIHA20N50E-E3?

    • SIHA20N50E-E3 is available in a TO-220AB package.
  10. Are there any recommended thermal management guidelines for using SIHA20N50E-E3?

    • It is recommended to use proper heat sinking and thermal management techniques to ensure optimal performance and reliability of SIHA20N50E-E3 in high-power applications.