SIHP100N60E-GE3 belongs to the category of power MOSFETs. It is commonly used in electronic circuits for switching and amplifying signals. The characteristics of this product include high voltage capability, low on-state resistance, and fast switching speed. It is typically packaged in a TO-220AB package and is available in quantities of 50 units per package.
The pin configuration of SIHP100N60E-GE3 includes three pins: gate (G), drain (D), and source (S).
Advantages - High voltage rating - Low on-state resistance - Fast switching speed
Disadvantages - Higher cost compared to lower-rated MOSFETs - Larger physical size due to higher voltage capability
SIHP100N60E-GE3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
SIHP100N60E-GE3 is commonly used in high-power applications such as motor control, power supplies, and inverters. Its high voltage capability makes it suitable for applications requiring efficient power management and control.
In conclusion, SIHP100N60E-GE3 is a high-voltage power MOSFET with fast switching speed and low on-state resistance, making it suitable for various high-power electronic applications.
[Word count: 243]
What is the maximum voltage rating of SIHP100N60E-GE3?
What is the maximum current rating of SIHP100N60E-GE3?
What type of package does SIHP100N60E-GE3 come in?
What are the typical applications for SIHP100N60E-GE3?
What is the on-state resistance of SIHP100N60E-GE3?
Is SIHP100N60E-GE3 suitable for high-frequency switching applications?
What is the maximum junction temperature of SIHP100N60E-GE3?
Does SIHP100N60E-GE3 have built-in protection features?
What is the gate threshold voltage of SIHP100N60E-GE3?
Is SIHP100N60E-GE3 RoHS compliant?