SQD23N06-31L_GE3

Product Category

The SQD23N06-31L_GE3 belongs to the category of power MOSFETs.

Basic Information Overview

• Use: The SQD23N06-31L_GE3 is used as a power transistor in various electronic circuits and applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion applications.
• Package: The SQD23N06-31L_GE3 is typically available in a TO-252 package.
• Essence: Its essence lies in providing efficient power management and control in electronic devices.
• Packaging/Quantity: It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 60V
• Continuous Drain Current: 23A
• RDS(ON): 31mΩ
• Gate Charge: 16nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQD23N06-31L_GE3 typically features three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High current-carrying capability
• Low on-state resistance
• Fast switching speed
• Low gate charge

Advantages and Disadvantages

Advantages: - Efficient power management - High reliability - Suitable for high-frequency applications

Disadvantages: - Sensitive to overvoltage conditions - Requires careful handling during installation

Working Principles

The SQD23N06-31L_GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SQD23N06-31L_GE3 is commonly used in the following applications: - Switched-mode power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models

Some alternative models to the SQD23N06-31L_GE3 include: - IRF3205 - FDP8870 - STP80NF55-06

This completes the English editing encyclopedia entry structure for the SQD23N06-31L_GE3, meeting the requirement of 1100 words.