onsemi (Ansemi)
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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
номер части
NCP5109BDR2G
Категория
Power Chip > Gate Driver IC
Производитель/Бренд
onsemi (Ansemi)
Инкапсуляция
SOIC-8
Упаковка
taping
Количество упаковок
2500
Описание
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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В наличии 81488 PCS
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Ключевые слова NCP5109BDR2G
NCP5109BDR2G Электронные компоненты
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NCP5109BDR2G Chip