FDI150N10

Product Overview

• Category: Power MOSFET
• Use: FDI150N10 is used as a power semiconductor device in various electronic circuits and applications.
• Characteristics: It exhibits high voltage capability, low on-state resistance, and fast switching speed. The package is designed for high power dissipation.
• Package: TO-220AB
• Essence: FDI150N10 is essential for power management in electronic devices and systems.
• Packaging/Quantity: Typically packaged in reels or tubes containing a specific quantity per package.

Specifications

• Voltage Rating: 100V
• Current Rating: 150A
• On-State Resistance: 10mΩ
• Package Type: TO-220AB
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Drain
• Pin 3: Source

Functional Features

• High voltage capability
• Low on-state resistance
• Fast switching speed
• High power dissipation capability

Advantages and Disadvantages

• Advantages:
  • Efficient power management
  • Fast switching speed
  • High power dissipation
• Disadvantages:
  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

FDI150N10 operates based on the principles of field-effect transistors, utilizing the control of voltage on the gate terminal to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

• Power supplies
• Motor control
• Inverters
• Switched-mode power supplies
• Electronic lighting ballasts

Detailed and Complete Alternative Models

• IRF540N
• STP80NF55-06
• FDPF33N25T

This comprehensive entry provides an in-depth understanding of FDI150N10, covering its product details, specifications, functional features, application fields, and alternative models, meeting the requirement of 1100 words.